Carrier recombination in tailored multilayer Si/Si1-xGex nanostructures

S. A. Mala, L. Tsybeskov, D. J. Lockwood, X. Wu, J. M. Baribeau

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Photoluminescence (PL) measurements were performed in Si/Si1-xGex nanostructures with a single Si0.92Ge0.08 nanometer-thick layer incorporated into Si/Si0.6Ge0.4 cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si0.92Ge0.08 nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si0.6Ge0.4 cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.

Original languageEnglish (US)
Pages (from-to)29-33
Number of pages5
JournalPhysica B: Condensed Matter
Volume453
DOIs
StatePublished - 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • Carrier recombination
  • Cluster multilayers
  • Photoluminescence
  • Si/SiGe nanostructures

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