Carrier recombination in tailored multilayer Si/Si1-xGex nanostructures

S. A. Mala; L. Tsybeskov; D. J. Lockwood; X. Wu; J. M. Baribeau

doi:10.1016/j.physb.2014.03.084

Carrier recombination in tailored multilayer Si/Si_1-xGe_x nanostructures

S. A. Mala, L. Tsybeskov, D. J. Lockwood, X. Wu, J. M. Baribeau

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Photoluminescence (PL) measurements were performed in Si/Si_1-xGe_x nanostructures with a single Si_0.92Ge_0.08 nanometer-thick layer incorporated into Si/Si_0.6Ge_0.4 cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si_0.92Ge_0.08 nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si_0.6Ge_0.4 cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.

Original language	English (US)
Pages (from-to)	29-33
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	453
DOIs	https://doi.org/10.1016/j.physb.2014.03.084
State	Published - 2014

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

Carrier recombination
Cluster multilayers
Photoluminescence
Si/SiGe nanostructures

Access to Document

10.1016/j.physb.2014.03.084

Cite this

@article{99616a433b6f40a19449db68f82994b9,

title = "Carrier recombination in tailored multilayer Si/Si1-xGex nanostructures",

abstract = "Photoluminescence (PL) measurements were performed in Si/Si1-xGex nanostructures with a single Si0.92Ge0.08 nanometer-thick layer incorporated into Si/Si0.6Ge0.4 cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si0.92Ge0.08 nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si0.6Ge0.4 cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.",

keywords = "Carrier recombination, Cluster multilayers, Photoluminescence, Si/SiGe nanostructures",

author = "Mala, {S. A.} and L. Tsybeskov and Lockwood, {D. J.} and X. Wu and Baribeau, {J. M.}",

year = "2014",

doi = "10.1016/j.physb.2014.03.084",

language = "English (US)",

volume = "453",

pages = "29--33",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - Carrier recombination in tailored multilayer Si/Si1-xGex nanostructures

AU - Mala, S. A.

AU - Tsybeskov, L.

AU - Lockwood, D. J.

AU - Wu, X.

AU - Baribeau, J. M.

PY - 2014

Y1 - 2014

N2 - Photoluminescence (PL) measurements were performed in Si/Si1-xGex nanostructures with a single Si0.92Ge0.08 nanometer-thick layer incorporated into Si/Si0.6Ge0.4 cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si0.92Ge0.08 nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si0.6Ge0.4 cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.

AB - Photoluminescence (PL) measurements were performed in Si/Si1-xGex nanostructures with a single Si0.92Ge0.08 nanometer-thick layer incorporated into Si/Si0.6Ge0.4 cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si0.92Ge0.08 nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si0.6Ge0.4 cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.

KW - Carrier recombination

KW - Cluster multilayers

KW - Photoluminescence

KW - Si/SiGe nanostructures

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DO - 10.1016/j.physb.2014.03.084

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SN - 0921-4526

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EP - 33

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

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