Carrier transport and lateral conductivity in nanocrystalline silicon layers

H. B. Kim, L. Montes, R. Krishnan, P. M. Fauchet, L. Tsybeskov

Research output: Contribution to journalConference articlepeer-review

Abstract

Carrier transport and lateral electrical properties of nanocrystalline silicon layers containing silicon nanocrystals were studied. The charging of silicon nanocrystals and Coulamb blockade effect were discussed based on the results from direct current and alternating current conductivity measurements. The effect of size of silicon nanocrystals on capacitance-voltage characteristics was also studied.

Original languageEnglish (US)
Pages (from-to)F5121-F5125
JournalMaterials Research Society Symposium - Proceedings
Volume638
StatePublished - 2001
Externally publishedYes
EventMicrocrystalline and Nanocrystalline Semiconductors 2000 - Boston, MA, United States
Duration: Nov 27 2000Nov 30 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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