Carrier transport and lateral conductivity in nanocrystalline silicon layers

H. B. Kim; L. Montes; R. Krishnan; P. M. Fauchet; L. Tsybeskov

Carrier transport and lateral conductivity in nanocrystalline silicon layers

H. B. Kim, L. Montes, R. Krishnan, P. M. Fauchet, L. Tsybeskov

Research output: Contribution to journal › Conference article › peer-review

Abstract

Carrier transport and lateral electrical properties of nanocrystalline silicon layers containing silicon nanocrystals were studied. The charging of silicon nanocrystals and Coulamb blockade effect were discussed based on the results from direct current and alternating current conductivity measurements. The effect of size of silicon nanocrystals on capacitance-voltage characteristics was also studied.

Original language	English (US)
Pages (from-to)	F5121-F5125
Journal	Materials Research Society Symposium - Proceedings
Volume	638
State	Published - 2001
Externally published	Yes
Event	Microcrystalline and Nanocrystalline Semiconductors 2000 - Boston, MA, United States Duration: Nov 27 2000 → Nov 30 2000

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{d952524a23df45fbbbcbff47729288bd,

title = "Carrier transport and lateral conductivity in nanocrystalline silicon layers",

abstract = "Carrier transport and lateral electrical properties of nanocrystalline silicon layers containing silicon nanocrystals were studied. The charging of silicon nanocrystals and Coulamb blockade effect were discussed based on the results from direct current and alternating current conductivity measurements. The effect of size of silicon nanocrystals on capacitance-voltage characteristics was also studied.",

author = "Kim, {H. B.} and L. Montes and R. Krishnan and Fauchet, {P. M.} and L. Tsybeskov",

note = "Funding Information: Dr. Kim acknowledges the support of Korea Science and Engineering Foundation. This work is supported in part by US Army Research Office, National Science Foundation, Semiconductor Research Corporation, Motorola, and AMD. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Microcrystalline and Nanocrystalline Semiconductors 2000 ; Conference date: 27-11-2000 Through 30-11-2000",

year = "2001",

language = "English (US)",

volume = "638",

pages = "F5121--F5125",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Carrier transport and lateral conductivity in nanocrystalline silicon layers

AU - Kim, H. B.

AU - Montes, L.

AU - Krishnan, R.

AU - Fauchet, P. M.

AU - Tsybeskov, L.

N1 - Funding Information: Dr. Kim acknowledges the support of Korea Science and Engineering Foundation. This work is supported in part by US Army Research Office, National Science Foundation, Semiconductor Research Corporation, Motorola, and AMD. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.

PY - 2001

Y1 - 2001

N2 - Carrier transport and lateral electrical properties of nanocrystalline silicon layers containing silicon nanocrystals were studied. The charging of silicon nanocrystals and Coulamb blockade effect were discussed based on the results from direct current and alternating current conductivity measurements. The effect of size of silicon nanocrystals on capacitance-voltage characteristics was also studied.

AB - Carrier transport and lateral electrical properties of nanocrystalline silicon layers containing silicon nanocrystals were studied. The charging of silicon nanocrystals and Coulamb blockade effect were discussed based on the results from direct current and alternating current conductivity measurements. The effect of size of silicon nanocrystals on capacitance-voltage characteristics was also studied.

UR - http://www.scopus.com/inward/record.url?scp=0035558373&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035558373&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035558373

SN - 0272-9172

VL - 638

SP - F5121-F5125

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Microcrystalline and Nanocrystalline Semiconductors 2000

Y2 - 27 November 2000 through 30 November 2000

ER -

Carrier transport and lateral conductivity in nanocrystalline silicon layers

Abstract

All Science Journal Classification (ASJC) codes

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