TY - GEN
T1 - Carrier Transport and Radiative Recombination Rate Enhancement in GaN/AlGaN Multiple Quantum Well UV-LED Using Band Engineering for Light Technology
AU - Das, Samadrita
AU - Lenka, Trupti Ranjan
AU - Talukdar, F. A.
AU - Velpula, Ravi Teja
AU - Nguyen, Hieu Pham Trung
N1 - Publisher Copyright:
© 2023, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
PY - 2023
Y1 - 2023
N2 - Graded composition in the barriers of multi-quantum was depicted and incorporated upon a c-plane GaN/AlGaN light emitting diodes (LEDs) constructed above a sapphire substrate for carrier transportation enhancement and lowering of efficiency droop. Because of their potential applications in various fields, ultra-violet LEDs formed on gallium nitride (GaN) materials have been the topic of interest for various researchers. The simulation outcomes exhibit that optimized light emitting diode having an aluminum constitution graded between 26% and ~2% in per triangular barrier demonstrates largest internal quantum efficiency (IQE) (38%) around 100 A/cm2 indicating significant rise compared to the conventional device having square barriers. This improvement has been ascribed to the modified energy band structures that upgrade the uniformity during transportation of carriers and also enhance the recombination rate in every GaN quantum well. As a result of this, the IQE of the device improves. The simulated LED device with graded quantum barrier structure acquires lower series resistance and substantially minimized efficiency droop characteristics of nearly 3.6% with respect to 11.8% for conventional device, supporting carrier enhancement (both electron as well as hole) transport in our designed device.
AB - Graded composition in the barriers of multi-quantum was depicted and incorporated upon a c-plane GaN/AlGaN light emitting diodes (LEDs) constructed above a sapphire substrate for carrier transportation enhancement and lowering of efficiency droop. Because of their potential applications in various fields, ultra-violet LEDs formed on gallium nitride (GaN) materials have been the topic of interest for various researchers. The simulation outcomes exhibit that optimized light emitting diode having an aluminum constitution graded between 26% and ~2% in per triangular barrier demonstrates largest internal quantum efficiency (IQE) (38%) around 100 A/cm2 indicating significant rise compared to the conventional device having square barriers. This improvement has been ascribed to the modified energy band structures that upgrade the uniformity during transportation of carriers and also enhance the recombination rate in every GaN quantum well. As a result of this, the IQE of the device improves. The simulated LED device with graded quantum barrier structure acquires lower series resistance and substantially minimized efficiency droop characteristics of nearly 3.6% with respect to 11.8% for conventional device, supporting carrier enhancement (both electron as well as hole) transport in our designed device.
KW - Electron blocking layer (EBL)
KW - Gallium nitride (GaN)
KW - Internal quantum efficiency (IQE)
KW - Light emitting diode (LED)
KW - Multiple quantum well (MQW)
KW - Quantum barrier (QB)
KW - Ultra-violet (UV)
UR - http://www.scopus.com/inward/record.url?scp=85138758353&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85138758353&partnerID=8YFLogxK
U2 - 10.1007/978-981-19-2308-1_20
DO - 10.1007/978-981-19-2308-1_20
M3 - Conference contribution
AN - SCOPUS:85138758353
SN - 9789811923074
T3 - Lecture Notes in Electrical Engineering
SP - 187
EP - 198
BT - Micro and Nanoelectronics Devices, Circuits and Systems - Select Proceedings of MNDCS 2022
A2 - Lenka, Trupti Ranjan
A2 - Misra, Durgamadhab
A2 - Fu, Lan
PB - Springer Science and Business Media Deutschland GmbH
T2 - 2nd International Conference on Micro and Nanoelectronics Devices, Circuits and Systems, MNDCS 2022
Y2 - 29 January 2022 through 31 January 2022
ER -