Carrier transport in Ge nanowire/Si substrate heterojunctions

E. K. Lee, B. V. Kamenev, L. Tsybeskov, S. Sharma, T. I. Kamins

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Low impedance and negligible conductivity temperature dependence are found for micron-long Ge nanowires (NWs) grown on (p+) Si substrates. In contrast, Ge NW/ (n+) Si substrate samples exhibit many orders of magnitude higher impedance, an exponential dependence of conductivity on temperature, current instabilities, and negative differential photoconductivity. Our experimental results are explained by a model that considers energy-band alignment and carrier transport in abrupt Ge NW/Si substrate heterojunctions.

Original languageEnglish (US)
Article number104303
JournalJournal of Applied Physics
Volume101
Issue number10
DOIs
StatePublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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