Carrier transport in Ge nanowire/Si substrate heterojunctions

E. K. Lee; B. V. Kamenev; L. Tsybeskov; S. Sharma; T. I. Kamins

doi:10.1063/1.2730558

Carrier transport in Ge nanowire/Si substrate heterojunctions

E. K. Lee, B. V. Kamenev, L. Tsybeskov, S. Sharma, T. I. Kamins

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Low impedance and negligible conductivity temperature dependence are found for micron-long Ge nanowires (NWs) grown on (p+) Si substrates. In contrast, Ge NW/ (n+) Si substrate samples exhibit many orders of magnitude higher impedance, an exponential dependence of conductivity on temperature, current instabilities, and negative differential photoconductivity. Our experimental results are explained by a model that considers energy-band alignment and carrier transport in abrupt Ge NW/Si substrate heterojunctions.

Original language	English (US)
Article number	104303
Journal	Journal of Applied Physics
Volume	101
Issue number	10
DOIs	https://doi.org/10.1063/1.2730558
State	Published - 2007

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1063/1.2730558

Cite this

@article{f24ada7510cd4e1baa1a8917d584fd79,

title = "Carrier transport in Ge nanowire/Si substrate heterojunctions",

abstract = "Low impedance and negligible conductivity temperature dependence are found for micron-long Ge nanowires (NWs) grown on (p+) Si substrates. In contrast, Ge NW/ (n+) Si substrate samples exhibit many orders of magnitude higher impedance, an exponential dependence of conductivity on temperature, current instabilities, and negative differential photoconductivity. Our experimental results are explained by a model that considers energy-band alignment and carrier transport in abrupt Ge NW/Si substrate heterojunctions.",

author = "Lee, {E. K.} and Kamenev, {B. V.} and L. Tsybeskov and S. Sharma and Kamins, {T. I.}",

note = "Funding Information: The work at NJIT is supported in part by the Foundation at NJIT, Intel Corporation, and NSF.",

year = "2007",

doi = "10.1063/1.2730558",

language = "English (US)",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Carrier transport in Ge nanowire/Si substrate heterojunctions

AU - Lee, E. K.

AU - Kamenev, B. V.

AU - Tsybeskov, L.

AU - Sharma, S.

AU - Kamins, T. I.

N1 - Funding Information: The work at NJIT is supported in part by the Foundation at NJIT, Intel Corporation, and NSF.

PY - 2007

Y1 - 2007

N2 - Low impedance and negligible conductivity temperature dependence are found for micron-long Ge nanowires (NWs) grown on (p+) Si substrates. In contrast, Ge NW/ (n+) Si substrate samples exhibit many orders of magnitude higher impedance, an exponential dependence of conductivity on temperature, current instabilities, and negative differential photoconductivity. Our experimental results are explained by a model that considers energy-band alignment and carrier transport in abrupt Ge NW/Si substrate heterojunctions.

AB - Low impedance and negligible conductivity temperature dependence are found for micron-long Ge nanowires (NWs) grown on (p+) Si substrates. In contrast, Ge NW/ (n+) Si substrate samples exhibit many orders of magnitude higher impedance, an exponential dependence of conductivity on temperature, current instabilities, and negative differential photoconductivity. Our experimental results are explained by a model that considers energy-band alignment and carrier transport in abrupt Ge NW/Si substrate heterojunctions.

UR - http://www.scopus.com/inward/record.url?scp=34249938033&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249938033&partnerID=8YFLogxK

U2 - 10.1063/1.2730558

DO - 10.1063/1.2730558

M3 - Article

AN - SCOPUS:34249938033

SN - 0021-8979

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 104303

ER -

Carrier transport in Ge nanowire/Si substrate heterojunctions

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this