Carrier transport in one-dimensional Ge Nanowires/Si substrate heterojunctions

Eun Kyu Lee, Boris V. Kamenev, Pavel A. Forsh, Ted I. Kamins, Leonid Tsybeskov

Research output: Contribution to journalConference articlepeer-review


Samples of Ge Nanowires (Ge NWs) grown by chemical vapor deposition (CVD) on single crystal, (100) and (111) oriented Si substrates were studied with respect to their electrical properties. Using different contact geometries, direct current (DC) and alternating current (AC) electrical and photoelectrical measurements were carried out at room temperature. A rectifying junction behavior was observed indicating a low defect density at NWs/substrate heterointerface. AC conductance exhibits significant frequency dependence with a power law behavior, suggesting that carrier transport in Ge NW volume is associated with hopping processes.

Original languageEnglish (US)
Article numberF7.21
Pages (from-to)335-340
Number of pages6
JournalMaterials Research Society Symposium Proceedings
StatePublished - 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 2 2004

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • General Materials Science


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