Carrier transport in one-dimensional Ge Nanowires/Si substrate heterojunctions

Eun Kyu Lee; Boris V. Kamenev; Pavel A. Forsh; Ted I. Kamins; Leonid Tsybeskov

Carrier transport in one-dimensional Ge Nanowires/Si substrate heterojunctions

Eun Kyu Lee, Boris V. Kamenev, Pavel A. Forsh, Ted I. Kamins, Leonid Tsybeskov

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Samples of Ge Nanowires (Ge NWs) grown by chemical vapor deposition (CVD) on single crystal, (100) and (111) oriented Si substrates were studied with respect to their electrical properties. Using different contact geometries, direct current (DC) and alternating current (AC) electrical and photoelectrical measurements were carried out at room temperature. A rectifying junction behavior was observed indicating a low defect density at NWs/substrate heterointerface. AC conductance exhibits significant frequency dependence with a power law behavior, suggesting that carrier transport in Ge NW volume is associated with hopping processes.

Original language	English (US)
Article number	F7.21
Pages (from-to)	335-340
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	832
State	Published - Aug 25 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

Cite this

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title = "Carrier transport in one-dimensional Ge Nanowires/Si substrate heterojunctions",

abstract = "Samples of Ge Nanowires (Ge NWs) grown by chemical vapor deposition (CVD) on single crystal, (100) and (111) oriented Si substrates were studied with respect to their electrical properties. Using different contact geometries, direct current (DC) and alternating current (AC) electrical and photoelectrical measurements were carried out at room temperature. A rectifying junction behavior was observed indicating a low defect density at NWs/substrate heterointerface. AC conductance exhibits significant frequency dependence with a power law behavior, suggesting that carrier transport in Ge NW volume is associated with hopping processes.",

author = "Lee, {Eun Kyu} and Kamenev, {Boris V.} and Forsh, {Pavel A.} and Kamins, {Ted I.} and Leonid Tsybeskov",

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T1 - Carrier transport in one-dimensional Ge Nanowires/Si substrate heterojunctions

AU - Lee, Eun Kyu

AU - Kamenev, Boris V.

AU - Forsh, Pavel A.

AU - Kamins, Ted I.

AU - Tsybeskov, Leonid

PY - 2005/8/25

Y1 - 2005/8/25

N2 - Samples of Ge Nanowires (Ge NWs) grown by chemical vapor deposition (CVD) on single crystal, (100) and (111) oriented Si substrates were studied with respect to their electrical properties. Using different contact geometries, direct current (DC) and alternating current (AC) electrical and photoelectrical measurements were carried out at room temperature. A rectifying junction behavior was observed indicating a low defect density at NWs/substrate heterointerface. AC conductance exhibits significant frequency dependence with a power law behavior, suggesting that carrier transport in Ge NW volume is associated with hopping processes.

AB - Samples of Ge Nanowires (Ge NWs) grown by chemical vapor deposition (CVD) on single crystal, (100) and (111) oriented Si substrates were studied with respect to their electrical properties. Using different contact geometries, direct current (DC) and alternating current (AC) electrical and photoelectrical measurements were carried out at room temperature. A rectifying junction behavior was observed indicating a low defect density at NWs/substrate heterointerface. AC conductance exhibits significant frequency dependence with a power law behavior, suggesting that carrier transport in Ge NW volume is associated with hopping processes.

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M3 - Article

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SN - 0272-9172

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EP - 340

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

M1 - F7.21

ER -

Carrier transport in one-dimensional Ge Nanowires/Si substrate heterojunctions

Abstract

All Science Journal Classification (ASJC) codes

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