Carrier transport in one-dimensional Ge Nanowires/Si substrate heterojunctions

Eun Kyu Lee, Boris V. Kamenev, Pavel A. Forsh, Ted I. Kamins, Leonid Tsybeskov

Research output: Contribution to journalArticlepeer-review


Samples of Ge Nanowires (Ge NWs) grown by chemical vapor deposition (CVD) on single crystal, (100) and (111) oriented Si substrates were studied with respect to their electrical properties. Using different contact geometries, direct current (DC) and alternating current (AC) electrical and photoelectrical measurements were carried out at room temperature. A rectifying junction behavior was observed indicating a low defect density at NWs/substrate heterointerface. AC conductance exhibits significant frequency dependence with a power law behavior, suggesting that carrier transport in Ge NW volume is associated with hopping processes.

Original languageEnglish (US)
Article numberF7.21
Pages (from-to)335-340
Number of pages6
JournalMaterials Research Society Symposium Proceedings
StatePublished - Aug 25 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials


Dive into the research topics of 'Carrier transport in one-dimensional Ge Nanowires/Si substrate heterojunctions'. Together they form a unique fingerprint.

Cite this