Abstract
Samples of Ge Nanowires (Ge NWs) grown by chemical vapor deposition (CVD) on single crystal, (100) and (111) oriented Si substrates were studied with respect to their electrical properties. Using different contact geometries, direct current (DC) and alternating current (AC) electrical and photoelectrical measurements were carried out at room temperature. A rectifying junction behavior was observed indicating a low defect density at NWs/substrate heterointerface. AC conductance exhibits significant frequency dependence with a power law behavior, suggesting that carrier transport in Ge NW volume is associated with hopping processes.
| Original language | English (US) |
|---|---|
| Article number | F7.21 |
| Pages (from-to) | 335-340 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 832 |
| State | Published - 2005 |
| Event | 2004 MRS Fall Meeting - Boston, MA, United States Duration: Nov 29 2004 → Dec 2 2004 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- General Materials Science