Samples of Ge Nanowires (Ge NWs) grown by chemical vapor deposition (CVD) on single crystal, (100) and (111) oriented Si substrates were studied with respect to their electrical properties. Using different contact geometries, direct current (DC) and alternating current (AC) electrical and photoelectrical measurements were carried out at room temperature. A rectifying junction behavior was observed indicating a low defect density at NWs/substrate heterointerface. AC conductance exhibits significant frequency dependence with a power law behavior, suggesting that carrier transport in Ge NW volume is associated with hopping processes.
|Original language||English (US)|
|Number of pages||6|
|Journal||Materials Research Society Symposium Proceedings|
|State||Published - Aug 25 2005|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials