TY - JOUR
T1 - Carrier transport mechanism in bottom gate thin-film transistor with SnO as active layer for CMOS displays
AU - Sivathanu, Vallisree
AU - Lenka, Trupti Ranjan
AU - Goyal, Vishal
AU - Nguyen, Hieu Pham Trung
N1 - Funding Information:
The authors acknowledge the research collaboration with Helen and John C. Hartmann Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, USA for this research work.
Publisher Copyright:
© 2021 John Wiley & Sons Ltd.
PY - 2022/5/1
Y1 - 2022/5/1
N2 - In this work, we report on four tin monoxide (SnO) thin-film transistor (TFT) grain boundary (GB) models of carrier transport considering the native defects in the thin film, interface traps, and GB deep/tail states. The changes in the activation energy and the GB barrier potential on the application of gate electric field are thoroughly investigated. The shift in Fermi level and the charge carrier transport mechanisms are examined for the two-channel model by the application of external potential. Four models are developed to study the impact of phase transformation of SnO material on the TFT characteristics. Among the four developed models which are considered as four different cases, Case (iv) shows excellent performance and the simulation results revealed that the location of Fermi level closer to the mid gap are suggested to favor the ambipolar behavior. Also, the influence of SnO material thickness and the effect of different dielectrics on the ambipolar device characteristics are examined aiming at optimized performance of the device. The developed optimized model will help the process engineers in tuning the SnO material parameters for achieving better performance in both p-type and n-type TFTs when employed in CMOS based displays.
AB - In this work, we report on four tin monoxide (SnO) thin-film transistor (TFT) grain boundary (GB) models of carrier transport considering the native defects in the thin film, interface traps, and GB deep/tail states. The changes in the activation energy and the GB barrier potential on the application of gate electric field are thoroughly investigated. The shift in Fermi level and the charge carrier transport mechanisms are examined for the two-channel model by the application of external potential. Four models are developed to study the impact of phase transformation of SnO material on the TFT characteristics. Among the four developed models which are considered as four different cases, Case (iv) shows excellent performance and the simulation results revealed that the location of Fermi level closer to the mid gap are suggested to favor the ambipolar behavior. Also, the influence of SnO material thickness and the effect of different dielectrics on the ambipolar device characteristics are examined aiming at optimized performance of the device. The developed optimized model will help the process engineers in tuning the SnO material parameters for achieving better performance in both p-type and n-type TFTs when employed in CMOS based displays.
KW - TCAD
KW - device modeling
KW - phase transformations
KW - thin film transistor
KW - tin monoxide
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U2 - 10.1002/jnm.2975
DO - 10.1002/jnm.2975
M3 - Article
AN - SCOPUS:85118834520
SN - 0894-3370
VL - 35
JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
IS - 3
M1 - e2975
ER -