Carrier transport mechanisms in metal-insulator-metal Au/Ba 0.8Sr0.2TiO3/ ZrO2/ Ba 0.8Sr0.2TiO3/Pt thin film heterostructures

Santosh K. Sahoo, H. Bakhru, Sumit Kumar, D. Misra, Colin A. Wolden, Y. N. Mohapatra, D. C. Agrawal

Research output: Contribution to journalConference articlepeer-review

Abstract

Ba0.8Sr0.2TiO3/ZrO2 heterostructured thin films are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel process. The current versus voltage (I-V) measurements of metal-insulator-metal (MIM) devices using the above multilayered thin film as the dielectric have been taken in the temperature range of 310 to 410K. The electrical conduction mechanisms contributing to the leakage current at different field regions have been studied in this work. Various models are used to know the different leakage mechanisms contributing to the conduction current in these devices. It is observed that Poole-Frenkel mechanism is the dominant conduction process in the high field region with a deep trap level energy (φt) of 1.31 eV whereas space charge limited current (SCLC) mechanism and Ohmic conduction process are contributing to the leakage current in the medium and low field regions respectively. The estimated shallow trap level (Et) for SCLC mechanism is 0.26 eV whereas the activation energy (Ea) for the electrons in the Ohmic conduction process is about 0.07 eV. An energy band diagram is given to explain the various leakage mechanisms in different field regions for these heterostructured thin films.

Original languageEnglish (US)
JournalMaterials Research Society Symposium Proceedings
Volume1507
DOIs
StatePublished - 2013
Event2012 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 25 2012Nov 30 2012

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • electrical properties
  • sol-gel
  • thin film

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