Carrier tunneling, current instabilities, and negative differential conductivity in nanocrystalline silicon - Silicon dioxide superlattices

B. V. Kamenev, G. F. Grom, D. J. Lockwood, J. P. McCaffrey, B. Laikhtman, L. Tsybeskov

Research output: Contribution to journalConference articlepeer-review

Abstract

Low temperature measurements of differential conductivity in nanocrystalline Si - amorphous SiO2 superlattices surprisingly reveal a clear double-peak structure associated with tunneling via levels of light and heavy holes. Numerical simulations show not only detailed agreement with the experiment but also predict that the studied system has no stable solutions for carrier concentration higher than 1017 cm-3. According to this prediction, partial screening of the external electric field generates current instabilities and oscillations, and that is experimentally observed. The developed model also suggests that a more uniform electric field and stabilization of carrier transport at a higher level of carrier density can be achieved under transient carrier injection.

Original languageEnglish (US)
Pages (from-to)813-818
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume737
StatePublished - 2003
EventQuantum Confined Semiconductor Nanostructures - Boston MA, United States
Duration: Dec 2 2002Dec 5 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Carrier tunneling, current instabilities, and negative differential conductivity in nanocrystalline silicon - Silicon dioxide superlattices'. Together they form a unique fingerprint.

Cite this