Carrier tunneling in nanocrystalline silicon-silicon dioxide superlattices: A weak coupling model

B. V. Kamenev, G. F. Grom, D. J. Lockwood, J. P. McCafrey, B. Laikhtman, L. Tsybeskov

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Differential conductivity measurements in partially disordered nanocrystalline Si-amorphous SiO2 superlattices reveal a double-peak structure associated with tunneling via energy levels of light and heavy holes. The theoretical model and numerical simulations presented here show good agreement with experiment and predict that this system does not have stable solutions for an injected carrier concentration greater than 1017 cm-3. Similar to a weakly coupled superlattice, a larger carrier concentration results in current instabilities. These instabilities have been observed and can be partially suppressed by using pulsed carrier photoinjection.

Original languageEnglish (US)
Article number235306
Pages (from-to)235306-1-235306-5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number23
DOIs
StatePublished - Jun 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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