Carrier tunneling in nanocrystalline silicon-silicon dioxide superlattices: A weak coupling model

B. V. Kamenev; G. F. Grom; D. J. Lockwood; J. P. McCafrey; B. Laikhtman; L. Tsybeskov

doi:10.1103/PhysRevB.69.235306

Carrier tunneling in nanocrystalline silicon-silicon dioxide superlattices: A weak coupling model

B. V. Kamenev, G. F. Grom, D. J. Lockwood, J. P. McCafrey, B. Laikhtman, L. Tsybeskov

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Differential conductivity measurements in partially disordered nanocrystalline Si-amorphous SiO₂ superlattices reveal a double-peak structure associated with tunneling via energy levels of light and heavy holes. The theoretical model and numerical simulations presented here show good agreement with experiment and predict that this system does not have stable solutions for an injected carrier concentration greater than 10¹⁷ cm^-3. Similar to a weakly coupled superlattice, a larger carrier concentration results in current instabilities. These instabilities have been observed and can be partially suppressed by using pulsed carrier photoinjection.

Original language	English (US)
Article number	235306
Pages (from-to)	235306-1-235306-5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	69
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.69.235306
State	Published - Jun 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.69.235306

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abstract = "Differential conductivity measurements in partially disordered nanocrystalline Si-amorphous SiO2 superlattices reveal a double-peak structure associated with tunneling via energy levels of light and heavy holes. The theoretical model and numerical simulations presented here show good agreement with experiment and predict that this system does not have stable solutions for an injected carrier concentration greater than 1017 cm-3. Similar to a weakly coupled superlattice, a larger carrier concentration results in current instabilities. These instabilities have been observed and can be partially suppressed by using pulsed carrier photoinjection.",

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year = "2004",

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AU - Kamenev, B. V.

AU - Grom, G. F.

AU - Lockwood, D. J.

AU - McCafrey, J. P.

AU - Laikhtman, B.

AU - Tsybeskov, L.

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Y1 - 2004/6

N2 - Differential conductivity measurements in partially disordered nanocrystalline Si-amorphous SiO2 superlattices reveal a double-peak structure associated with tunneling via energy levels of light and heavy holes. The theoretical model and numerical simulations presented here show good agreement with experiment and predict that this system does not have stable solutions for an injected carrier concentration greater than 1017 cm-3. Similar to a weakly coupled superlattice, a larger carrier concentration results in current instabilities. These instabilities have been observed and can be partially suppressed by using pulsed carrier photoinjection.

AB - Differential conductivity measurements in partially disordered nanocrystalline Si-amorphous SiO2 superlattices reveal a double-peak structure associated with tunneling via energy levels of light and heavy holes. The theoretical model and numerical simulations presented here show good agreement with experiment and predict that this system does not have stable solutions for an injected carrier concentration greater than 1017 cm-3. Similar to a weakly coupled superlattice, a larger carrier concentration results in current instabilities. These instabilities have been observed and can be partially suppressed by using pulsed carrier photoinjection.

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Carrier tunneling in nanocrystalline silicon-silicon dioxide superlattices: A weak coupling model

Abstract

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