Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies

Nerijus Armakavicius; Chamseddine Bouhafs; Vallery Stanishev; Philipp Kühne; Rositsa Yakimova; Sean Knight; Tino Hofmann; Mathias Schubert; Vanya Darakchieva

doi:10.1016/j.apsusc.2016.10.023

Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies

Nerijus Armakavicius
, Chamseddine Bouhafs
, Vallery Stanishev
, Philipp Kühne
, Rositsa Yakimova
, Sean Knight
, Tino Hofmann
, Mathias Schubert
, Vanya Darakchieva

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 10 ¹² cm ⁻² range and a free hole mobility parameter as high as 1550 cm ² /Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm ² /Vs and an order of magnitude higher free electron density in the low 10 ¹³ cm ⁻² range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.

Original language	English (US)
Pages (from-to)	357-360
Number of pages	4
Journal	Applied Surface Science
Volume	421
DOIs	https://doi.org/10.1016/j.apsusc.2016.10.023
State	Published - Nov 1 2017
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Keywords

Epitaxial graphene
Free charge carrier properties
THz optical Hall effect

Access to Document

10.1016/j.apsusc.2016.10.023

Cite this

@article{d969426b5c9545db9b0eb6a95c4c1696,

title = "Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies",

abstract = " Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 10 12 cm −2 range and a free hole mobility parameter as high as 1550 cm 2 /Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm 2 /Vs and an order of magnitude higher free electron density in the low 10 13 cm −2 range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.",

keywords = "Epitaxial graphene, Free charge carrier properties, THz optical Hall effect",

author = "Nerijus Armakavicius and Chamseddine Bouhafs and Vallery Stanishev and Philipp K{\"u}hne and Rositsa Yakimova and Sean Knight and Tino Hofmann and Mathias Schubert and Vanya Darakchieva",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2017",

month = nov,

day = "1",

doi = "10.1016/j.apsusc.2016.10.023",

language = "English (US)",

volume = "421",

pages = "357--360",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies

AU - Armakavicius, Nerijus

AU - Bouhafs, Chamseddine

AU - Stanishev, Vallery

AU - Kühne, Philipp

AU - Yakimova, Rositsa

AU - Knight, Sean

AU - Hofmann, Tino

AU - Schubert, Mathias

AU - Darakchieva, Vanya

PY - 2017/11/1

Y1 - 2017/11/1

N2 - Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 10 12 cm −2 range and a free hole mobility parameter as high as 1550 cm 2 /Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm 2 /Vs and an order of magnitude higher free electron density in the low 10 13 cm −2 range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.

AB - Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 10 12 cm −2 range and a free hole mobility parameter as high as 1550 cm 2 /Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm 2 /Vs and an order of magnitude higher free electron density in the low 10 13 cm −2 range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.

KW - Epitaxial graphene

KW - Free charge carrier properties

KW - THz optical Hall effect

UR - https://www.scopus.com/pages/publications/85005939271

UR - https://www.scopus.com/pages/publications/85005939271#tab=citedBy

U2 - 10.1016/j.apsusc.2016.10.023

DO - 10.1016/j.apsusc.2016.10.023

M3 - Article

AN - SCOPUS:85005939271

SN - 0169-4332

VL - 421

SP - 357

EP - 360

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this