Characteristics of HfO₂ and SiO₂ on p-type silicon wafers using terahertz spectroscopy

Keyphrases

• P-type 100%
• Silicon Wafer 100%
• HfO2 100%
• Silica 100%
• Terahertz Spectroscopy 100%
• High-k Dielectric 50%
• Pump Source 50%
• HfO2 Films 50%
• Characterization Techniques 25%
• Dielectric Materials 25%
• Dielectric 25%
• Protective Coatings 25%
• Silicon Substrate 25%
• Optical Characterization 25%
• Terahertz 25%
• Wafer 25%
• Photoresist 25%
• All-optical 25%
• Silicon Nitride 25%
• Oxide Layer 25%
• Varying Thickness 25%
• Ion Laser 25%
• Differential Measurement 25%
• Carrier Density 25%
• Terahertz Frequency Range 25%
• Oxide Layer Thickness 25%
• SiO2 Coating 25%
• Optical Pump 25%
• Linear Transmission 25%
• Photogenerated Carriers 25%
• Heavily Doped 25%
• Terahertz Time-domain Spectroscopy (THz-TDS) 25%

Engineering

• Terahertz 100%
• Dielectrics 100%
• Silicon Wafer 100%
• Transmissions 50%
• Oxide Layer 50%
• Characterization Method 25%
• Time Domain 25%
• Mm Diameter 25%
• Silicon Substrate 25%
• Photoresist 25%
• Photogenerated Carrier 25%
• Carrier Density 25%
• Differential Measurement 25%

Material Science

• Dielectric Material 100%
• Terahertz Spectroscopy 100%
• Silicon Wafer 100%
• Film 50%
• Silicon 50%
• Oxide Compound 50%
• Carrier Concentration 25%
• Protective Coating 25%
• Silicon Nitride 25%