@inproceedings{f0e3d8215a0448549be6c985481719fb,
title = "Characteristics of high efficiency InGaP/InGaAs double junction solar cells grown on GaAs substrates",
abstract = "In this paper, we report on the conversion efficiency improvement in In0.50Ga0.50P/InxGa1-xAs tandem solar cells by employing metamorphic InGaAs bottom cell instead of lattice matched GaAs cell. In0.50Ga0.50P/In0.025Ga 0.975As and In0.50Ga0.50P/GaAs double junction solar cells were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) on GaAs substrates. High-resolution transmission electron microscopy (HR-TEM) measurement reveals the dislocation in the In0.025Ga 0 975As layer which is caused by the lattice mismatch between In 0.025Ga0.975As subcell and GaAs substrate. Conversion efficiencies of these cells were measured to be 24.37% and 25.11% (AM1.5, 1 sun, 25°C) for the Iri0.50Ga0.50P/GaAs and In 0.50Ga0.50P/In0.025Ga0.975As solar cells, respectively. The details about the solar cell characteristics will be discussed in the presentation.",
keywords = "Dislocation, InGaAs, InGaP, Tandem solar cell",
author = "Nguyen, {H. P.T.} and Kim, {K. H.} and H. Lim and Lee, {J. J.}",
year = "2009",
doi = "10.1063/1.3243244",
language = "English (US)",
isbn = "9780735407060",
series = "AIP Conference Proceedings",
pages = "149--154",
booktitle = "International Workshop on Advanced Material for New and Renewable Energy, AMNRE",
note = "International Workshop on Advanced Material for New and Renewable Energy, AMNRE ; Conference date: 09-06-2009 Through 11-06-2009",
}