Characteristics of high efficiency InGaP/InGaAs double junction solar cells grown on GaAs substrates

H. P.T. Nguyen, K. H. Kim, H. Lim, J. J. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this paper, we report on the conversion efficiency improvement in In0.50Ga0.50P/InxGa1-xAs tandem solar cells by employing metamorphic InGaAs bottom cell instead of lattice matched GaAs cell. In0.50Ga0.50P/In0.025Ga 0.975As and In0.50Ga0.50P/GaAs double junction solar cells were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) on GaAs substrates. High-resolution transmission electron microscopy (HR-TEM) measurement reveals the dislocation in the In0.025Ga 0 975As layer which is caused by the lattice mismatch between In 0.025Ga0.975As subcell and GaAs substrate. Conversion efficiencies of these cells were measured to be 24.37% and 25.11% (AM1.5, 1 sun, 25°C) for the Iri0.50Ga0.50P/GaAs and In 0.50Ga0.50P/In0.025Ga0.975As solar cells, respectively. The details about the solar cell characteristics will be discussed in the presentation.

Original languageEnglish (US)
Title of host publicationInternational Workshop on Advanced Material for New and Renewable Energy, AMNRE
Pages149-154
Number of pages6
DOIs
StatePublished - Nov 30 2009
Externally publishedYes
EventInternational Workshop on Advanced Material for New and Renewable Energy, AMNRE - Jakarta, Indonesia
Duration: Jun 9 2009Jun 11 2009

Publication series

NameAIP Conference Proceedings
Volume1169
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherInternational Workshop on Advanced Material for New and Renewable Energy, AMNRE
CountryIndonesia
CityJakarta
Period6/9/096/11/09

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Keywords

  • Dislocation
  • InGaAs
  • InGaP
  • Tandem solar cell

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