Characteristics of thermally evaporated HfO 2

R. Garg, N. A. Chowdhury, R. K. Jarwal, Durgamadhab Misra, P. K. Swain, M. Bhaskaran

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Electrical characteristics of thermally evaporated of HfO 2 were studied for the first time. The dielectric constant was found to be in the range of 18 to 25. MOS capacitors using these HfO 2 films as dielectric were annealed at various temperatures. It is observed that HfO 2 films annealed at 450°C show a low leakage current density of <10 -7amp/cm 2 at IV. Significant reduction in oxide charges to 1.61 × 10 11/cm 2 was observed from capacitance voltage measurements. Low temperature charge trapping characteristics shows neutral shallow traps in HfO 2. Observed characteristics indicate that HfO 2 films deposited by standard thermal evaporation are suitable for metal-oxide-semiconductor device applications.

Original languageEnglish (US)
Title of host publicationPhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Int. Symp. on High Dielectric Constant Materials
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing Issues
EditorsS. Kar, D. Misra, M. Houssa, D. Landheer, al et al
Pages385-395
Number of pages11
Volume22
StatePublished - Dec 1 2003
EventPhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States
Duration: Oct 12 2003Oct 16 2003

Other

OtherPhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
Country/TerritoryUnited States
CityOrlando, FL.
Period10/12/0310/16/03

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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