Abstract
Electrical characteristics of thermally evaporated of HfO 2 were studied for the first time. The dielectric constant was found to be in the range of 18 to 25. MOS capacitors using these HfO 2 films as dielectric were annealed at various temperatures. It is observed that HfO 2 films annealed at 450°C show a low leakage current density of <10 -7amp/cm 2 at IV. Significant reduction in oxide charges to 1.61 × 10 11/cm 2 was observed from capacitance voltage measurements. Low temperature charge trapping characteristics shows neutral shallow traps in HfO 2. Observed characteristics indicate that HfO 2 films deposited by standard thermal evaporation are suitable for metal-oxide-semiconductor device applications.
| Original language | English (US) |
|---|---|
| Title of host publication | Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Int. Symp. on High Dielectric Constant Materials |
| Subtitle of host publication | Materials Science, Processing, Reliability, and Manufacturing Issues |
| Editors | S. Kar, D. Misra, M. Houssa, D. Landheer, al et al |
| Pages | 385-395 |
| Number of pages | 11 |
| Volume | 22 |
| State | Published - Dec 1 2003 |
| Event | Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States Duration: Oct 12 2003 → Oct 16 2003 |
Other
| Other | Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues |
|---|---|
| Country/Territory | United States |
| City | Orlando, FL. |
| Period | 10/12/03 → 10/16/03 |
All Science Journal Classification (ASJC) codes
- Engineering(all)