Characteristics of thermally evaporated HfO 2

R. Garg, N. A. Chowdhury, R. K. Jarwal, D. Misra, P. K. Swain, M. Bhaskaran

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

Electrical characteristics of thermally evaporated of HfO 2 were studied for the first time. The dielectric constant was found to be in the range of 18 to 25. MOS capacitors using these HfO 2 films as dielectric were annealed at various temperatures. It is observed that HfO 2 films annealed at 450°C show a low leakage current density of <10 -7amp/cm 2 at IV. Significant reduction in oxide charges to 1.61 × 10 11/cm 2 was observed from capacitance voltage measurements. Low temperature charge trapping characteristics shows neutral shallow traps in HfO 2. Observed characteristics indicate that HfO 2 films deposited by standard thermal evaporation are suitable for metal-oxide-semiconductor device applications.

Original languageEnglish (US)
Pages385-395
Number of pages11
StatePublished - 2003
EventPhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States
Duration: Oct 12 2003Oct 16 2003

Other

OtherPhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
Country/TerritoryUnited States
CityOrlando, FL.
Period10/12/0310/16/03

All Science Journal Classification (ASJC) codes

  • General Engineering

Fingerprint

Dive into the research topics of 'Characteristics of thermally evaporated HfO 2'. Together they form a unique fingerprint.

Cite this