Abstract
Electrical characteristics of thermally evaporated of HfO 2 were studied for the first time. The dielectric constant was found to be in the range of 18 to 25. MOS capacitors using these HfO 2 films as dielectric were annealed at various temperatures. It is observed that HfO 2 films annealed at 450°C show a low leakage current density of <10 -7amp/cm 2 at IV. Significant reduction in oxide charges to 1.61 × 10 11/cm 2 was observed from capacitance voltage measurements. Low temperature charge trapping characteristics shows neutral shallow traps in HfO 2. Observed characteristics indicate that HfO 2 films deposited by standard thermal evaporation are suitable for metal-oxide-semiconductor device applications.
Original language | English (US) |
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Pages | 385-395 |
Number of pages | 11 |
State | Published - 2003 |
Event | Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States Duration: Oct 12 2003 → Oct 16 2003 |
Other
Other | Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues |
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Country/Territory | United States |
City | Orlando, FL. |
Period | 10/12/03 → 10/16/03 |
All Science Journal Classification (ASJC) codes
- General Engineering