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Characteristics of ultra shallow B implantation with decaborane
Cheng Li
, Maria A. Albano
, Leszek Gladczuk
, Marek Sosnowski
Electrical and Computer Engineering
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Keyphrases
Ultra-shallow
100%
Decaborane
100%
Annealing
50%
Sputtering Yield
50%
Cluster Ions
50%
Equivalent Energy
50%
Irradiation
25%
P-type
25%
Si Surface
25%
Atomic Force Microscopy
25%
Crystalline Materials
25%
Amorphous Si
25%
Interaction Mechanism
25%
C-Si
25%
Ta Films
25%
Spatial Frequency
25%
Si Devices
25%
Depth Profile
25%
Rough Surface
25%
Amorphous Materials
25%
Very Low Energy
25%
Equivalent Dose
25%
Crystalline Si
25%
Power Density Spectrum
25%
Smoothing Effect
25%
Beta Distribution
25%
Ar Ions
25%
Si Effect
25%
Ion-surface Interaction
25%
Engineering
Shallower
100%
Energy Engineering
66%
Monomer
66%
Sputtering Yield
66%
Polycrystalline
33%
Power Density
33%
Si Surface
33%
Atomic Force Microscopy
33%
Spatial Frequency
33%
Depth Profile
33%
Si Device
33%
Surface Effect
33%
Density Spectrum
33%
Material Science
Crystalline Material
100%
Amorphous Material
100%
Boron Ion
100%
Film
50%
Density
50%
Rough Surface
50%
Secondary Ion Mass Spectrometry
50%