@inproceedings{d108ca2022504b7d8afaff774e8b7e6c,
title = "Characterization and analysis of large-area h-BN on sapphire",
abstract = "Extensive post-growth microscopic and spectroscopic characterizations are performed to leverage true potentials of high-quality hexagonal boron nitride (h-BN). Compressive residual strain between h-BN and sapphire is estimated and corroborated by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Raman spectroscopy also supported the result.",
keywords = "CVD, H-BN, Raman, Transmission electron microscopy",
author = "Shantanu Saha and Anthony Rice and Arnob Ghosh and Hasan, {Syed Mohammad Najib} and Weicheng You and Mary Crawford and Bissell, {Luke J.} and Robert Bedford and Shamsul Arafin",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 4th IEEE Research and Applications of Photonics in Defense Conference, RAPID 2021 ; Conference date: 02-08-2021 Through 04-08-2021",
year = "2021",
month = aug,
doi = "10.1109/RAPID51799.2021.9521461",
language = "English (US)",
series = "2021 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2021",
address = "United States",
}