CHARACTERIZATION OF LPCVD ALUMINUM FOR VLSI PROCESSING.

R. A. Levy, M. L. Green, P. K. Gallagher

Research output: Contribution to journalConference articlepeer-review

Abstract

This paper discusses the properties of Al films deposited by a low pressure chemical vapor deposition (LPCVD) process using triisobutyl Al (TIBAL) as a source. Such films are now commercially available. All films described in the present investigation were obtained from an outside vendor. Results of this work establish a basic understanding of the properties of these LPCVD Al films and their suitability for current VLSI processing.

Original languageEnglish (US)
Pages (from-to)253-254
Number of pages2
JournalElectrochemical Society Extended Abstracts
Volume84-1
StatePublished - Dec 1 1984
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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