This paper discusses the properties of Al films deposited by a low pressure chemical vapor deposition (LPCVD) process using triisobutyl Al (TIBAL) as a source. Such films are now commercially available. All films described in the present investigation were obtained from an outside vendor. Results of this work establish a basic understanding of the properties of these LPCVD Al films and their suitability for current VLSI processing.
|Original language||English (US)|
|Number of pages||2|
|Journal||Electrochemical Society Extended Abstracts|
|State||Published - Dec 1 1984|
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