Abstract
This paper discusses the properties of Al films deposited by a low pressure chemical vapor deposition (LPCVD) process using triisobutyl Al (TIBAL) as a source. Such films are now commercially available. All films described in the present investigation were obtained from an outside vendor. Results of this work establish a basic understanding of the properties of these LPCVD Al films and their suitability for current VLSI processing.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 253-254 |
| Number of pages | 2 |
| Journal | Electrochemical Society Extended Abstracts |
| Volume | 84-1 |
| State | Published - 1984 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Engineering