CHARACTERIZATION OF LPCVD ALUMINUM FOR VLSI PROCESSING.

R. A. Levy, L. Green

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Summary form only given. The properties are discussed of Al films deposited by a low-pressure chemical vapor deposition (LPCVD) process using tri-isobutyl Al (TIBAL) as a source. Results of this work will establish a basic understanding of the properties of these LPCVD Al films and their suitability for current VLSI processing.

Original languageEnglish (US)
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherBusiness Cent for Academic Soc Japan
Pages32-33
Number of pages2
ISBN (Print)4930813085
StatePublished - Dec 1 1984
Externally publishedYes

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'CHARACTERIZATION OF LPCVD ALUMINUM FOR VLSI PROCESSING.'. Together they form a unique fingerprint.

Cite this