This paper discusses the properties of aluminum films deposited by a low pressure chemical vapor deposition process using tri-isobutyl aluminum as a source. Results of this work demonstrate that this process provides conformal step coverage, introduces no surface states and promises to yield high wafer throughput. Films deposited on oxidized silicon monitors exhibit excellent properties in terms of chemical purity, adhesion and electrical resistivity. Films deposited on device wafers prove to be compatible with current VLSI processing in terms of patterning, dry etching, bondability and appear to have no effect on overall device performance. However, drawbacks of LPCVD aluminum appear to be in its structure-related properties, namely electromigration resistance, and Al-Si interdiffusion. These problems and potential solutions are addressed.
|Number of pages
|Published - Dec 1 1984
All Science Journal Classification (ASJC) codes
- General Engineering