Characterization of poly-silicon emitter BJTs as access devices for phase change memory

B. Rajendran, M. Breitwisch, R. Cheek, M. H. Lee, Y. H. Shih, H. L. Lung, C. Lam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

We demonstrate poly-Silicon emitter vertical PNP Bipolar Junction Transistors (BJTs) that could be used as access devices for Phase Change Memory. The device arrays fabricated using a 180nm BiCMOS process exhibit current drive capability in excess of 10mA/μm2, On-Off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to enable a high-density Phase Change Memory technology.

Original languageEnglish (US)
Title of host publication2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages31-32
Number of pages2
DOIs
StatePublished - Dec 1 2009
Externally publishedYes
Event2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan, Province of China
Duration: Apr 27 2009Apr 29 2009

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
CountryTaiwan, Province of China
CityHsinchu
Period4/27/094/29/09

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • NV memory
  • PCRAM
  • Poly-emitter BJTs

Fingerprint Dive into the research topics of 'Characterization of poly-silicon emitter BJTs as access devices for phase change memory'. Together they form a unique fingerprint.

Cite this