Characterization of poly-silicon emitter BJTs as access devices for phase change memory

B. Rajendran; M. Breitwisch; R. Cheek; M. H. Lee; Y. H. Shih; H. L. Lung; C. Lam

doi:10.1109/VTSA.2009.5159278

Characterization of poly-silicon emitter BJTs as access devices for phase change memory

B. Rajendran, M. Breitwisch, R. Cheek, M. H. Lee, Y. H. Shih, H. L. Lung, C. Lam

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

We demonstrate poly-Silicon emitter vertical PNP Bipolar Junction Transistors (BJTs) that could be used as access devices for Phase Change Memory. The device arrays fabricated using a 180nm BiCMOS process exhibit current drive capability in excess of 10mA/μm², On-Off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to enable a high-density Phase Change Memory technology.

Original language	English (US)
Title of host publication	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages	31-32
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2009.5159278
State	Published - 2009
Externally published	Yes
Event	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan, Province of China Duration: Apr 27 2009 → Apr 29 2009

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	4/27/09 → 4/29/09

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

NV memory
PCRAM
Poly-emitter BJTs

Access to Document

10.1109/VTSA.2009.5159278

Cite this

Rajendran, B., Breitwisch, M., Cheek, R., Lee, M. H., Shih, Y. H., Lung, H. L., & Lam, C. (2009). Characterization of poly-silicon emitter BJTs as access devices for phase change memory. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 (pp. 31-32). Article 5159278 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2009.5159278

@inproceedings{1181513e79034db3af02f76bdee2ff37,

title = "Characterization of poly-silicon emitter BJTs as access devices for phase change memory",

abstract = "We demonstrate poly-Silicon emitter vertical PNP Bipolar Junction Transistors (BJTs) that could be used as access devices for Phase Change Memory. The device arrays fabricated using a 180nm BiCMOS process exhibit current drive capability in excess of 10mA/μm2, On-Off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to enable a high-density Phase Change Memory technology.",

keywords = "NV memory, PCRAM, Poly-emitter BJTs",

author = "B. Rajendran and M. Breitwisch and R. Cheek and Lee, {M. H.} and Shih, {Y. H.} and Lung, {H. L.} and C. Lam",

year = "2009",

doi = "10.1109/VTSA.2009.5159278",

language = "English (US)",

isbn = "9781424427857",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "31--32",

booktitle = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09",

note = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 ; Conference date: 27-04-2009 Through 29-04-2009",

}

Rajendran, B, Breitwisch, M, Cheek, R, Lee, MH, Shih, YH, Lung, HL & Lam, C 2009, Characterization of poly-silicon emitter BJTs as access devices for phase change memory. in 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09., 5159278, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 31-32, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09, Hsinchu, Taiwan, Province of China, 4/27/09. https://doi.org/10.1109/VTSA.2009.5159278

Characterization of poly-silicon emitter BJTs as access devices for phase change memory. / Rajendran, B.; Breitwisch, M.; Cheek, R. et al.
2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 31-32 5159278 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Characterization of poly-silicon emitter BJTs as access devices for phase change memory

AU - Rajendran, B.

AU - Breitwisch, M.

AU - Cheek, R.

AU - Lee, M. H.

AU - Shih, Y. H.

AU - Lung, H. L.

AU - Lam, C.

PY - 2009

Y1 - 2009

N2 - We demonstrate poly-Silicon emitter vertical PNP Bipolar Junction Transistors (BJTs) that could be used as access devices for Phase Change Memory. The device arrays fabricated using a 180nm BiCMOS process exhibit current drive capability in excess of 10mA/μm2, On-Off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to enable a high-density Phase Change Memory technology.

AB - We demonstrate poly-Silicon emitter vertical PNP Bipolar Junction Transistors (BJTs) that could be used as access devices for Phase Change Memory. The device arrays fabricated using a 180nm BiCMOS process exhibit current drive capability in excess of 10mA/μm2, On-Off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to enable a high-density Phase Change Memory technology.

KW - NV memory

KW - PCRAM

KW - Poly-emitter BJTs

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U2 - 10.1109/VTSA.2009.5159278

DO - 10.1109/VTSA.2009.5159278

M3 - Conference contribution

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SN - 9781424427857

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 31

EP - 32

BT - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

T2 - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

Y2 - 27 April 2009 through 29 April 2009

ER -

Rajendran B, Breitwisch M, Cheek R, Lee MH, Shih YH, Lung HL et al. Characterization of poly-silicon emitter BJTs as access devices for phase change memory. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 31-32. 5159278. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2009.5159278

Characterization of poly-silicon emitter BJTs as access devices for phase change memory

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