Current-voltage characteristics of Al/SiO2/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics