Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

Yu V. Ryabchikov, P. A. Forsh, E. A. Lebedev, V. Yu Timoshenko, P. K. Kashkarov, B. V. Kamenev, L. Tsybeskov

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Current-voltage characteristics of Al/SiO2/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.

Original languageEnglish (US)
Pages (from-to)1052-1054
Number of pages3
JournalSemiconductors
Volume40
Issue number9
DOIs
StatePublished - Sep 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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