Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

Yu V. Ryabchikov; P. A. Forsh; E. A. Lebedev; V. Yu Timoshenko; P. K. Kashkarov; B. V. Kamenev; L. Tsybeskov

doi:10.1134/S1063782606090119

Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

Yu V. Ryabchikov, P. A. Forsh, E. A. Lebedev, V. Yu Timoshenko, P. K. Kashkarov, B. V. Kamenev, L. Tsybeskov

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Current-voltage characteristics of Al/SiO₂/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.

Original language	English (US)
Pages (from-to)	1052-1054
Number of pages	3
Journal	Semiconductors
Volume	40
Issue number	9
DOIs	https://doi.org/10.1134/S1063782606090119
State	Published - Sep 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1134/S1063782606090119

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abstract = "Current-voltage characteristics of Al/SiO2/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.",

author = "Ryabchikov, {Yu V.} and Forsh, {P. A.} and Lebedev, {E. A.} and Timoshenko, {V. Yu} and Kashkarov, {P. K.} and Kamenev, {B. V.} and L. Tsybeskov",

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T1 - Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

AU - Ryabchikov, Yu V.

AU - Forsh, P. A.

AU - Lebedev, E. A.

AU - Timoshenko, V. Yu

AU - Kashkarov, P. K.

AU - Kamenev, B. V.

AU - Tsybeskov, L.

PY - 2006/9

Y1 - 2006/9

N2 - Current-voltage characteristics of Al/SiO2/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.

AB - Current-voltage characteristics of Al/SiO2/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.

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EP - 1054

JO - Semiconductors

JF - Semiconductors

IS - 9

ER -

Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

Abstract

All Science Journal Classification (ASJC) codes

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