Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

Yu V. Ryabchikov; P. A. Forsh; E. A. Lebedev; V. Yu Timoshenko; P. K. Kashkarov; B. V. Kamenev; L. Tsybeskov

doi:10.1134/S1063782606090119

Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

Yu V. Ryabchikov
, P. A. Forsh
, E. A. Lebedev
, V. Yu Timoshenko
, P. K. Kashkarov
, B. V. Kamenev
, L. Tsybeskov

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Current-voltage characteristics of Al/SiO₂/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.

Original language	English (US)
Pages (from-to)	1052-1054
Number of pages	3
Journal	Semiconductors
Volume	40
Issue number	9
DOIs	https://doi.org/10.1134/S1063782606090119
State	Published - Sep 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1134/S1063782606090119

Cite this

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abstract = "Current-voltage characteristics of Al/SiO2/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.",

author = "Ryabchikov, \{Yu V.\} and Forsh, \{P. A.\} and Lebedev, \{E. A.\} and Timoshenko, \{V. Yu\} and Kashkarov, \{P. K.\} and Kamenev, \{B. V.\} and L. Tsybeskov",

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T1 - Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

AU - Ryabchikov, Yu V.

AU - Forsh, P. A.

AU - Lebedev, E. A.

AU - Timoshenko, V. Yu

AU - Kashkarov, P. K.

AU - Kamenev, B. V.

AU - Tsybeskov, L.

PY - 2006/9

Y1 - 2006/9

N2 - Current-voltage characteristics of Al/SiO2/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.

AB - Current-voltage characteristics of Al/SiO2/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.

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UR - https://www.scopus.com/pages/publications/33748874358#tab=citedBy

U2 - 10.1134/S1063782606090119

DO - 10.1134/S1063782606090119

M3 - Article

AN - SCOPUS:33748874358

SN - 1063-7826

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SP - 1052

EP - 1054

JO - Semiconductors

JF - Semiconductors

IS - 9

ER -

Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

Abstract

All Science Journal Classification (ASJC) codes

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