Charge ordering and magnetoresistance due to reduced double exchange

K. Liu, X. Wu, K. Ahn, T. Sulchek, C. Chien, John Q. Xiao

Research output: Contribution to journalArticlepeer-review

132 Scopus citations

Abstract

Structural, transport, and magnetic properties of (Formula presented)(Formula presented)(Formula presented) (0≤x≤1) have been studied to probe the consequence of strong lattice distortion and reduced double exchange. Charge ordering has been observed over a large composition range of 0.30≤x≤0.80. For 0.33≤x≤0.40, at low temperatures, a magnetic field induces a first-order antiferromagnetic semiconductor to ferromagnetic metal transition and reduces the resistance by several orders of magnitude. These results illustrate the competition between double exchange and mechanisms that promote charge localization.

Original languageEnglish (US)
Pages (from-to)3007-3010
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume54
Issue number5
DOIs
StatePublished - 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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