Charge transfer at aluminum-C60 interfaces in thin-film multilayer structures

A. F. Hebard, C. B. Eom, Y. Iwasa, K. B. Lyons, G. A. Thomas, D. H. Rapkine, R. M. Fleming, R. C. Haddon, Julia M. Phillips, J. H. Marshall, R. H. Eick

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Thin-film multilayer structures with up to 20 repeat layers have been grown in a high-vacuum chamber by sequential deposition of aluminum (Al) and fullerene (C60) onto room-temperature substrates. The periodicity of the layers is confirmed by x-ray-diffraction and in situ resistance measurements. The presence of underlying layers of C60 reduces the critical thickness at which Al becomes conducting from ∼35 to ∼20. In addition, there is a sudden increase in resistance that occurs when each Al layer is covered by a monolayer of C60. These observations, together with the measurement of a downward shift in frequency of a considerably broadened Raman-active Ag(2) pentagonal-pinch mode, imply that up to six electrons per C60 are transferred from the Al to the C60 layer. This demonstration of charge transfer across planar metal-C60 interfaces suggests that multilayers may be a useful vehicle for forming fullerene interface compounds in two-dimensional structures.

Original languageEnglish (US)
Pages (from-to)17740-17743
Number of pages4
JournalPhysical Review B
Issue number23
StatePublished - Dec 15 1994
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics


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