Charge transfer in a multi-implant pinned-buried photodetector

R. K. Jarwal; Durga Misra; John L. Lowrance

doi:10.1109/16.918231

Charge transfer in a multi-implant pinned-buried photodetector

R. K. Jarwal, Durga Misra, John L. Lowrance

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

This work presents a charge transfer model for a multi-implant (graded) pinned-buried photodetector for high frame rate imaging applications. The model takes into account the initial charge of each implanted region which is divided into a large number of small areas and the maximum effective transit length of the far and near electrons by taking into account the fringing field effect due to graded implants under uniform illumination condition. The model predicts 1.5 μs for a single-implant and 500 ns for a three-implant photodetector for collection of 90% of the initial charge. The computed values agree well with the experimental results for a three-implant 70 μm × 45 μm photodetector measured at a rate of 10 ⁶ frames/s with uniformly illuminated by 100 ns LED pulses.

Original language	English (US)
Pages (from-to)	858-862
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	5
DOIs	https://doi.org/10.1109/16.918231
State	Published - May 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Charge transfer
High frame rate image sensors
Photodetector
Transit time

Access to Document

10.1109/16.918231

Cite this

@article{fc33cc10f54f43c289314b603117d73d,

title = "Charge transfer in a multi-implant pinned-buried photodetector",

abstract = "This work presents a charge transfer model for a multi-implant (graded) pinned-buried photodetector for high frame rate imaging applications. The model takes into account the initial charge of each implanted region which is divided into a large number of small areas and the maximum effective transit length of the far and near electrons by taking into account the fringing field effect due to graded implants under uniform illumination condition. The model predicts 1.5 μs for a single-implant and 500 ns for a three-implant photodetector for collection of 90% of the initial charge. The computed values agree well with the experimental results for a three-implant 70 μm × 45 μm photodetector measured at a rate of 10 6 frames/s with uniformly illuminated by 100 ns LED pulses.",

keywords = "Charge transfer, High frame rate image sensors, Photodetector, Transit time",

author = "Jarwal, {R. K.} and Durga Misra and Lowrance, {John L.}",

note = "Funding Information: Manuscript received March 27, 2000; revised November 5, 2000. This work was supported by the New Jersey Center for Optoelectronics. The review of this paper was arranged by Editor J. Hynecek. R. K. Jarwal and D. Misra are with the Department of Electrical and Computer Engineering, New Jersey Institute of Technology, University Heights, Newark, NJ 07102-1982 USA (e-mail: [email protected]). J. L. Lowrance is with the Princeton Scientific Instruments Inc., Monmouth Junction, NJ 08852 USA. Publisher Item Identifier S 0018-9383(01)02343-7.",

year = "2001",

month = may,

doi = "10.1109/16.918231",

language = "English (US)",

volume = "48",

pages = "858--862",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Charge transfer in a multi-implant pinned-buried photodetector

AU - Jarwal, R. K.

AU - Misra, Durga

AU - Lowrance, John L.

N1 - Funding Information: Manuscript received March 27, 2000; revised November 5, 2000. This work was supported by the New Jersey Center for Optoelectronics. The review of this paper was arranged by Editor J. Hynecek. R. K. Jarwal and D. Misra are with the Department of Electrical and Computer Engineering, New Jersey Institute of Technology, University Heights, Newark, NJ 07102-1982 USA (e-mail: [email protected]). J. L. Lowrance is with the Princeton Scientific Instruments Inc., Monmouth Junction, NJ 08852 USA. Publisher Item Identifier S 0018-9383(01)02343-7.

PY - 2001/5

Y1 - 2001/5

N2 - This work presents a charge transfer model for a multi-implant (graded) pinned-buried photodetector for high frame rate imaging applications. The model takes into account the initial charge of each implanted region which is divided into a large number of small areas and the maximum effective transit length of the far and near electrons by taking into account the fringing field effect due to graded implants under uniform illumination condition. The model predicts 1.5 μs for a single-implant and 500 ns for a three-implant photodetector for collection of 90% of the initial charge. The computed values agree well with the experimental results for a three-implant 70 μm × 45 μm photodetector measured at a rate of 10 6 frames/s with uniformly illuminated by 100 ns LED pulses.

AB - This work presents a charge transfer model for a multi-implant (graded) pinned-buried photodetector for high frame rate imaging applications. The model takes into account the initial charge of each implanted region which is divided into a large number of small areas and the maximum effective transit length of the far and near electrons by taking into account the fringing field effect due to graded implants under uniform illumination condition. The model predicts 1.5 μs for a single-implant and 500 ns for a three-implant photodetector for collection of 90% of the initial charge. The computed values agree well with the experimental results for a three-implant 70 μm × 45 μm photodetector measured at a rate of 10 6 frames/s with uniformly illuminated by 100 ns LED pulses.

KW - Charge transfer

KW - High frame rate image sensors

KW - Photodetector

KW - Transit time

UR - http://www.scopus.com/inward/record.url?scp=0035339559&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035339559&partnerID=8YFLogxK

U2 - 10.1109/16.918231

DO - 10.1109/16.918231

M3 - Article

AN - SCOPUS:0035339559

SN - 0018-9383

VL - 48

SP - 858

EP - 862

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Charge transfer in a multi-implant pinned-buried photodetector

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this