Charge trapping and interface characteristics of thermally evaporated HfO 2

N. A. Chowdhury, R. Garg, D. Misra

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33 Scopus citations

Abstract

Charge trapping and interface characteristics of hafnium oxide (HfO 2) films, grown by standard thermal evaporation, were investigated. High frequency capacitance-voltage and conductance measurements were carried out at various temperatures on aluminum gate metal-oxide-semiconductor capacitors, annealed at 450°C. A hysteresis below 30 mV was observed. Electrical data show, that charge trapping in HfO 2 initially increases with decrease in temperature while it shows a turnaround phenomenon when the temperature is decreased further. Interface state density distribution observed at low temperatures suggests that charge-trapping behavior of these films is mostly due to shallow traps at the interface.

Original languageEnglish (US)
Pages (from-to)3289-3291
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number15
DOIs
StatePublished - Oct 11 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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