Charge trapping and interface characteristics of hafnium oxide (HfO 2) films, grown by standard thermal evaporation, were investigated. High frequency capacitance-voltage and conductance measurements were carried out at various temperatures on aluminum gate metal-oxide-semiconductor capacitors, annealed at 450°C. A hysteresis below 30 mV was observed. Electrical data show, that charge trapping in HfO 2 initially increases with decrease in temperature while it shows a turnaround phenomenon when the temperature is decreased further. Interface state density distribution observed at low temperatures suggests that charge-trapping behavior of these films is mostly due to shallow traps at the interface.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Oct 11 2004|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)