Charge trapping and interface characteristics of thermally evaporated HfO 2

N. A. Chowdhury; R. Garg; D. Misra

doi:10.1063/1.1805708

Charge trapping and interface characteristics of thermally evaporated HfO ₂

N. A. Chowdhury
, R. Garg
, D. Misra

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Charge trapping and interface characteristics of hafnium oxide (HfO ₂) films, grown by standard thermal evaporation, were investigated. High frequency capacitance-voltage and conductance measurements were carried out at various temperatures on aluminum gate metal-oxide-semiconductor capacitors, annealed at 450°C. A hysteresis below 30 mV was observed. Electrical data show, that charge trapping in HfO ₂ initially increases with decrease in temperature while it shows a turnaround phenomenon when the temperature is decreased further. Interface state density distribution observed at low temperatures suggests that charge-trapping behavior of these films is mostly due to shallow traps at the interface.

Original language	English (US)
Pages (from-to)	3289-3291
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	15
DOIs	https://doi.org/10.1063/1.1805708
State	Published - Oct 11 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1805708

Cite this

@article{a68ca321684d4cf3a246ea086168dda6,

title = "Charge trapping and interface characteristics of thermally evaporated HfO 2 ",

abstract = "Charge trapping and interface characteristics of hafnium oxide (HfO 2) films, grown by standard thermal evaporation, were investigated. High frequency capacitance-voltage and conductance measurements were carried out at various temperatures on aluminum gate metal-oxide-semiconductor capacitors, annealed at 450°C. A hysteresis below 30 mV was observed. Electrical data show, that charge trapping in HfO 2 initially increases with decrease in temperature while it shows a turnaround phenomenon when the temperature is decreased further. Interface state density distribution observed at low temperatures suggests that charge-trapping behavior of these films is mostly due to shallow traps at the interface.",

author = "Chowdhury, \{N. A.\} and R. Garg and D. Misra",

note = "Funding Information: The authors would like to thank Dr. P. K. Swain and Dr. M. Bhaskaran of Sarnoff Corporation of Princeton, NJ for their help in sample preparation. This work was partially supported by a grant from National Science Foundation (Award No. ECS-0140584).",

year = "2004",

month = oct,

day = "11",

doi = "10.1063/1.1805708",

language = "English (US)",

volume = "85",

pages = "3289--3291",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Charge trapping and interface characteristics of thermally evaporated HfO 2

AU - Chowdhury, N. A.

AU - Garg, R.

AU - Misra, D.

N1 - Funding Information: The authors would like to thank Dr. P. K. Swain and Dr. M. Bhaskaran of Sarnoff Corporation of Princeton, NJ for their help in sample preparation. This work was partially supported by a grant from National Science Foundation (Award No. ECS-0140584).

PY - 2004/10/11

Y1 - 2004/10/11

N2 - Charge trapping and interface characteristics of hafnium oxide (HfO 2) films, grown by standard thermal evaporation, were investigated. High frequency capacitance-voltage and conductance measurements were carried out at various temperatures on aluminum gate metal-oxide-semiconductor capacitors, annealed at 450°C. A hysteresis below 30 mV was observed. Electrical data show, that charge trapping in HfO 2 initially increases with decrease in temperature while it shows a turnaround phenomenon when the temperature is decreased further. Interface state density distribution observed at low temperatures suggests that charge-trapping behavior of these films is mostly due to shallow traps at the interface.

AB - Charge trapping and interface characteristics of hafnium oxide (HfO 2) films, grown by standard thermal evaporation, were investigated. High frequency capacitance-voltage and conductance measurements were carried out at various temperatures on aluminum gate metal-oxide-semiconductor capacitors, annealed at 450°C. A hysteresis below 30 mV was observed. Electrical data show, that charge trapping in HfO 2 initially increases with decrease in temperature while it shows a turnaround phenomenon when the temperature is decreased further. Interface state density distribution observed at low temperatures suggests that charge-trapping behavior of these films is mostly due to shallow traps at the interface.

UR - https://www.scopus.com/pages/publications/8644259229

UR - https://www.scopus.com/pages/publications/8644259229#tab=citedBy

U2 - 10.1063/1.1805708

DO - 10.1063/1.1805708

M3 - Article

AN - SCOPUS:8644259229

SN - 0003-6951

VL - 85

SP - 3289

EP - 3291

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Charge trapping and interface characteristics of thermally evaporated HfO ₂

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this