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Charge Trapping at Deep States in Hf-Silicate Based High- κ Gate Dielectrics
N. A. Chowdhury,
D. Misra
Electrical and Computer Engineering
Research output
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Contribution to journal
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Article
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peer-review
56
Scopus citations
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Engineering & Materials Science
Charge trapping
100%
Gate dielectrics
90%
Silicates
73%
Vacancies
57%
Defects
43%
Electron injection
33%
Hot electrons
31%
Substrates
29%
Recovery
28%
Electron energy levels
24%
Leakage currents
22%
Temperature measurement
22%
Electric fields
19%
Electric potential
10%
Chemical Compounds
Deep Trap
98%
Shallow Trap
69%
Dielectric Material
56%
Hot Electron
30%
Leakage Current
27%
Electron Particle
22%
Tunneling
21%
Electric Field
19%
Voltage
15%
Liquid Film
10%
Energy
10%