Charge trapping in metal gate/high-k n-mosfets during substrate injection

P. Srinivasan, N. A. Chowdhury, A. Peralta, Durgamadhab Misra, B. H. Choi, Lee

Research output: Contribution to conferencePaperpeer-review

Abstract

Charge trapping characteristics of MOCVD HfSi xO y (20% SiO 2) gate stack of n-MOSFETs during substrate injection have been investigated. Positive constant voltage stress (CVS) and constant current stress (CCS) were applied at the gate of TJN/HfSi xO y/SiO 2/p-Si n-MOSFETs having EOT of 2nm. Significant electron trapping is observed from the positive shift of threshold voltage (ΔV t) after stress. Curve fitting of the threshold voltage shift data confirms power law dependence for Hf-silicate gate stacks. Electron trapping at bulk high-k oxide and interface trap generation were observed from charge pumping measurement for both cases. A turn-around effect is noticed for ΔV t as the stress current and voltage increases under CCS and CVS. Dependence of spatial distribution of charge trapping at shallow traps on stress level in the high-k film, and redistribution of trapped charges during and after removal of stress are possibly responsible for the turn-around effect.

Original languageEnglish (US)
Pages366-375
Number of pages10
StatePublished - Dec 1 2005
Event207th ECS Meeting - Quebec, Canada
Duration: May 16 2005May 20 2005

Other

Other207th ECS Meeting
CountryCanada
CityQuebec
Period5/16/055/20/05

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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