Skip to main navigation
Skip to search
Skip to main content
New Jersey Institute of Technology Home
Help & FAQ
Home
Profiles
Research units
Facilities
Federal Grants
Research output
Press/Media
Search by expertise, name or affiliation
Charge-trapping properties of gate oxide grown on nitrogen-implanted silicon substrate
D. Misra
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
15
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Charge-trapping properties of gate oxide grown on nitrogen-implanted silicon substrate'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Silicon Substrate
100%
Gate Oxide
100%
Implanted Silicon
100%
Charge Trapping Properties
100%
Oxides
33%
High Field
33%
Si-SiO2 Interface
33%
Trap Generation
33%
Electron Traps
33%
SiO2 Film
33%
Threshold Voltage Shift
33%
Current Stress
33%
Electron Holes
33%
Oxide Growth
33%
Generation Rate
33%
Ultra-thin Gate Oxide
33%
Hole Trapping
33%
Nitrogen Ion Implantation
33%
Fowler-Nordheim
33%
Material Science
Silicon
100%
Oxide Compound
100%
Charge Trapping
100%
Film
25%
Engineering
Silicon Substrate
100%
Gate Oxide
100%
Empirical Model
33%
Oxide Growth
33%
Sio2 Film
33%