Chemical vapor deposition of boron-doped hydrogenated amorphous silicon

F. B. Ellis, A. E. Delahoy

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Deposition conditions and film properties for a variety of boron-doped hydrogenated amorphous silicon films and silicon-carbon films produced by chemical vapor deposition (CVD) are discussed. Deposition gases include monosilane, disilane, trisilane, and acetylene. Two types of optically wide band-gap p layers are obtained. One of these window p layers (without carbon) has been extensively tested in photovoltaic devices. Remarkably, this p layer can be deposited between about 200 to 300°C. A typical open circuit voltage in an all CVD p-i-n device is 0.70-0.72 V, and in a hybrid device where the i and n layers are deposited by glow discharge, 0.8-0.83 V.

Original languageEnglish (US)
Pages (from-to)135-137
Number of pages3
JournalApplied Physics Letters
Volume47
Issue number2
DOIs
StatePublished - 1985

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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