Abstract
Deposition conditions and film properties for a variety of boron-doped hydrogenated amorphous silicon films and silicon-carbon films produced by chemical vapor deposition (CVD) are discussed. Deposition gases include monosilane, disilane, trisilane, and acetylene. Two types of optically wide band-gap p layers are obtained. One of these window p layers (without carbon) has been extensively tested in photovoltaic devices. Remarkably, this p layer can be deposited between about 200 to 300°C. A typical open circuit voltage in an all CVD p-i-n device is 0.70-0.72 V, and in a hybrid device where the i and n layers are deposited by glow discharge, 0.8-0.83 V.
Original language | English (US) |
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Pages (from-to) | 135-137 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 47 |
Issue number | 2 |
DOIs | |
State | Published - 1985 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)