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Chemical vapor deposition of boron-doped hydrogenated amorphous silicon
F. B. Ellis, A. E. Delahoy
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peer-review
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Dive into the research topics of 'Chemical vapor deposition of boron-doped hydrogenated amorphous silicon'. Together they form a unique fingerprint.
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Keyphrases
Hydrogenated Amorphous Silicon
100%
Chemical Vapor Deposition
100%
Boron Doping
100%
Film Properties
33%
Deposition Conditions
33%
Hybrid System
33%
Photovoltaic Devices
33%
Acetylene
33%
Ni-P
33%
Open-circuit Voltage
33%
Glow Discharge
33%
Wide Bandgap
33%
Hydrogenated Amorphous Silicon Films
33%
Monosilane
33%
Disilane
33%
Silicon Carbonitride Films
33%
Trisilane
33%
Material Science
Boron
100%
Amorphous Silicon
100%
Chemical Vapor Deposition
100%
Film
66%
Electronic Circuit
33%
Silicon
33%
Photovoltaics
33%
Silane
33%
Carbon Films
33%
Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Hydrogenated Amorphous Silicon
100%
Deposition Condition
33%
Film Property
33%
Photovoltaics
33%
Open Circuit Voltage
33%
Energy Gap
33%
Glow Discharge
33%
Chemical Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%