CIGS devices with ZIS, In2S3, and CdS buffer layers

A. E. Delahoy; M. Akhtar; J. Cambridge; L. Chen; R. Govindarajan; S. Guo; M. J. Romero

CIGS devices with ZIS, In₂S₃, and CdS buffer layers

A. E. Delahoy, M. Akhtar, J. Cambridge, L. Chen, R. Govindarajan, S. Guo, M. J. Romero

Research output: Contribution to journal › Conference article › peer-review

Abstract

The device performances of Cu(ln,Ga)Se₂ solar cells are compared as a function of various buffer layers applied by thermal evaporation that are considered as candidates to replace the conventional CdS buffer layer applied by chemical bath deposition. The buffer layers include ZnIn2Se₄ (ZIS), In₂Se₃, and ZnSe. Devices with CdS and ZIS buffers are also studied by EBIC and cathodoluminescence.

Original language	English (US)
Pages (from-to)	640-643
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
State	Published - 2002
Externally published	Yes
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: May 19 2002 → May 24 2002

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

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title = "CIGS devices with ZIS, In2S3, and CdS buffer layers",

abstract = "The device performances of Cu(ln,Ga)Se2 solar cells are compared as a function of various buffer layers applied by thermal evaporation that are considered as candidates to replace the conventional CdS buffer layer applied by chemical bath deposition. The buffer layers include ZnIn2Se4 (ZIS), In2Se3, and ZnSe. Devices with CdS and ZIS buffers are also studied by EBIC and cathodoluminescence.",

author = "Delahoy, {A. E.} and M. Akhtar and J. Cambridge and L. Chen and R. Govindarajan and S. Guo and Romero, {M. J.}",

year = "2002",

language = "English (US)",

pages = "640--643",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

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TY - JOUR

T1 - CIGS devices with ZIS, In2S3, and CdS buffer layers

AU - Delahoy, A. E.

AU - Akhtar, M.

AU - Cambridge, J.

AU - Chen, L.

AU - Govindarajan, R.

AU - Guo, S.

AU - Romero, M. J.

PY - 2002

Y1 - 2002

N2 - The device performances of Cu(ln,Ga)Se2 solar cells are compared as a function of various buffer layers applied by thermal evaporation that are considered as candidates to replace the conventional CdS buffer layer applied by chemical bath deposition. The buffer layers include ZnIn2Se4 (ZIS), In2Se3, and ZnSe. Devices with CdS and ZIS buffers are also studied by EBIC and cathodoluminescence.

AB - The device performances of Cu(ln,Ga)Se2 solar cells are compared as a function of various buffer layers applied by thermal evaporation that are considered as candidates to replace the conventional CdS buffer layer applied by chemical bath deposition. The buffer layers include ZnIn2Se4 (ZIS), In2Se3, and ZnSe. Devices with CdS and ZIS buffers are also studied by EBIC and cathodoluminescence.

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UR - http://www.scopus.com/inward/citedby.url?scp=0036953391&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036953391

SN - 0160-8371

SP - 640

EP - 643

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

CIGS devices with ZIS, In₂S₃, and CdS buffer layers

Abstract

All Science Journal Classification (ASJC) codes

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