CIGS devices with ZIS, In2S3, and CdS buffer layers

A. E. Delahoy, M. Akhtar, J. Cambridge, L. Chen, R. Govindarajan, S. Guo, M. J. Romero

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations


The device performances of Cu(ln,Ga)Se2 solar cells are compared as a function of various buffer layers applied by thermal evaporation that are considered as candidates to replace the conventional CdS buffer layer applied by chemical bath deposition. The buffer layers include ZnIn2Se4 (ZIS), In2Se3, and ZnSe. Devices with CdS and ZIS buffers are also studied by EBIC and cathodoluminescence.

Original languageEnglish (US)
Pages (from-to)640-643
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
StatePublished - 2002
Externally publishedYes
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: May 19 2002May 24 2002

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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