Abstract
The integrated clock and data recovery (CDR) circuit is a key element for broad-band optical communication systems at 40 Gb/s. We report a 40-Gb/s CDR fabricated in indium-phosphide heterojunction bipolar transistor (InP HBT) technology using a robust architecture of a phase-locked loop (PLL) with a digital early-late phase detector. The faster InP HBT technology allows the digital phase detector to operate at the full data rate of 40 Gb/s. This, in turn, reduces the circuit complexity (transistor count) and the voltage-controlled oscillator (VCO) requirements. The IC includes an on-chip LC VCO, on-chip clock dividers to drive an external demultiplexer, and low-frequency PLL control loop and on-chip limiting amplifier buffers for the data and clock I/O. To our knowledge, this is the first demonstration of a mixed-signal IC operating at the clock rate of 40 GHz. We also describe the chip architecture and measurement results.
Original language | English (US) |
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Pages (from-to) | 1120-1125 |
Number of pages | 6 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 37 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2002 |
Externally published | Yes |
Event | 23rd IEEE GaAs IC Symposium - Baltimore, MD, United States Duration: Oct 21 2001 → Oct 24 2001 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Keywords
- CDR
- Clock and data recovery
- Fiber-optic communication receiver
- InP HBT
- Limiting amplifier
- Phase detector
- VCO