Clustering analysis in boron and phosphorus implanted (100) germanium by x-ray absorption spectroscopy

Keyphrases

• Germanium 100%
• Boron 100%
• Cluster Analysis 100%
• X-ray Absorption Spectroscopy 100%
• Annealing 100%
• Wafer 50%
• Recrystallization 50%
• X-ray Absorption Fine Structure 50%
• Ge Wafers 50%
• Spectroscopic Measurement 25%
• High-k Dielectric 25%
• Dopant 25%
• Semiconductor Devices 25%
• Annealing Temperature 25%
• K-edge 25%
• MOSFET 25%
• Secondary Ion Mass Spectrometry 25%
• Debye-Waller Factor 25%
• Thermal Annealing 25%
• Concentration Profile 25%
• Doping Concentration 25%
• Annealing Treatment 25%
• Device Technology 25%
• Implantation Parameters 25%
• Structural Investigation 25%
• Local Structure Information 25%
• Local Structural Analysis 25%
• Distinct Responses 25%
• Post-implantation Annealing 25%
• High Mobility 25%
• Local Structural Change 25%
• High Purity Nitrogen 25%

Chemistry

• Spectroscopy 100%
• Doping Material 100%
• Germanium 100%
• Absorption Spectroscopy 100%
• Boron 100%
• Crystallization 100%
• Dielectric Material 50%
• Secondary Ion Mass Spectroscopy 50%
• Debye-Waller Factor 50%
• Nitrogen 50%
• Concentration Profile 50%

Physics

• Fine Structure 100%
• Absorption Spectroscopy 100%
• Crystallization 100%
• Boron 100%
• Secondary Ion Mass Spectrometry 50%
• Semiconductor Device 50%
• Dielectric Material 50%
• Nitrogen 50%
• K-Edge 50%