Keyphrases
Phosphorus
100%
Germanium
100%
Boron
100%
X-ray Absorption Spectroscopy
100%
Clustering Analysis
100%
Wafer
100%
Annealing
100%
Recrystallization
50%
X-ray Absorption Fine Structure
50%
High-k Dielectric
25%
High Mobility
25%
Dopant
25%
Semiconductor Devices
25%
Annealing Temperature
25%
K-edge
25%
MOSFET
25%
Secondary Ion Mass Spectrometry
25%
Debye-Waller Factor
25%
Thermal Annealing
25%
Concentration Profile
25%
Doping Concentration
25%
High Purity
25%
Annealing Treatment
25%
Device Technology
25%
Implantation Parameters
25%
Structural Investigation
25%
Local Structure Information
25%
Local Structural Analysis
25%
Distinct Responses
25%
Post-implantation Annealing
25%
Local Structural Modifications
25%
Material Science
Absorption Spectroscopy
100%
Germanium
100%
Boron
100%
Annealing
100%
Doping (Additives)
66%
Dielectric Material
33%
Semiconductor Device
33%
Secondary Ion Mass Spectrometry
33%
Mass Spectrometry
33%
Engineering
Ray Absorption
100%
Ge Wafer
66%
Energy Engineering
33%
Dielectrics
33%
Dopants
33%
Semiconductor Device
33%
Annealing Temperature
33%
Concentration Profile
33%
Structural Modification
33%
Dopant Concentration
33%