CMOS compatible alignment marks for the SCALPEL proof of lithography tool

R. C. Farrow; W. K. Waskiewicz; I. Kizilyalli; L. Ocola; J. Felker; C. Biddick; G. Gallatin; M. Mkrtchyan; M. Blakey; J. Kraus; A. Novembre; P. Orphanos; M. Peabody; R. Kasica; A. Kornblit; F. Klemens

doi:10.1016/S0167-9317(99)00077-5

CMOS compatible alignment marks for the SCALPEL proof of lithography tool

R. C. Farrow, W. K. Waskiewicz, I. Kizilyalli, L. Ocola, J. Felker, C. Biddick, G. Gallatin, M. Mkrtchyan, M. Blakey, J. Kraus, A. Novembre, P. Orphanos, M. Peabody, R. Kasica, A. Kornblit, F. Klemens

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

SCALPEL alignment marks have been fabricated in a SiO₂WSi₂ structure using SCALPEL lithography and plasma processing. The positions of the marks were detected through e-beam resist in the SCALPEL proof of lithography (SPOL) tool by scanning the image of the corresponding mask mark over the wafer mark and detecting the backscattered electron signal. Single scans of line space patterns yielded mark positions that were repeatable within 30 nm 3σ with a close of 0.4 μC/cm² and signal-to-noise of 16 dB. An analysis shows that the measured repeatability is consistent with a random noise limited response. The mark detection repeatability limit, that can be attributed to SPOL machine factors, was measured to be 20 nm 3σ. By using a digitally sequenced mark pattern, the capture range of the mark detection was increased to 13 μm while maintaining 36 nm 3σ precision. The SPOL machine mark detection results are very promising considering that they were measured under electron optical conditions that were not optimized.

Original language	English (US)
Pages (from-to)	263-266
Number of pages	4
Journal	Microelectronic Engineering
Volume	46
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(99)00077-5
State	Published - May 1999
Externally published	Yes
Event	Proceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98) - Leuven Duration: Sep 22 1998 → Sep 24 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(99)00077-5

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Farrow, R. C., Waskiewicz, W. K., Kizilyalli, I., Ocola, L., Felker, J., Biddick, C., Gallatin, G., Mkrtchyan, M., Blakey, M., Kraus, J., Novembre, A., Orphanos, P., Peabody, M., Kasica, R., Kornblit, A., & Klemens, F. (1999). CMOS compatible alignment marks for the SCALPEL proof of lithography tool. Microelectronic Engineering, 46(1), 263-266. https://doi.org/10.1016/S0167-9317(99)00077-5

@article{c7c7af7e0f804ddb82e9f9a6534a4f5d,

title = "CMOS compatible alignment marks for the SCALPEL proof of lithography tool",

abstract = "SCALPEL alignment marks have been fabricated in a SiO2WSi2 structure using SCALPEL lithography and plasma processing. The positions of the marks were detected through e-beam resist in the SCALPEL proof of lithography (SPOL) tool by scanning the image of the corresponding mask mark over the wafer mark and detecting the backscattered electron signal. Single scans of line space patterns yielded mark positions that were repeatable within 30 nm 3σ with a close of 0.4 μC/cm2 and signal-to-noise of 16 dB. An analysis shows that the measured repeatability is consistent with a random noise limited response. The mark detection repeatability limit, that can be attributed to SPOL machine factors, was measured to be 20 nm 3σ. By using a digitally sequenced mark pattern, the capture range of the mark detection was increased to 13 μm while maintaining 36 nm 3σ precision. The SPOL machine mark detection results are very promising considering that they were measured under electron optical conditions that were not optimized.",

author = "Farrow, {R. C.} and Waskiewicz, {W. K.} and I. Kizilyalli and L. Ocola and J. Felker and C. Biddick and G. Gallatin and M. Mkrtchyan and M. Blakey and J. Kraus and A. Novembre and P. Orphanos and M. Peabody and R. Kasica and A. Kornblit and F. Klemens",

note = "Funding Information: * This work was supported, in part, by DARPA under Contract Number MDA972-98-C-007.; Proceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98) ; Conference date: 22-09-1998 Through 24-09-1998",

year = "1999",

month = may,

doi = "10.1016/S0167-9317(99)00077-5",

language = "English (US)",

volume = "46",

pages = "263--266",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1",

}

Farrow, RC, Waskiewicz, WK, Kizilyalli, I, Ocola, L, Felker, J, Biddick, C, Gallatin, G, Mkrtchyan, M, Blakey, M, Kraus, J, Novembre, A, Orphanos, P, Peabody, M, Kasica, R, Kornblit, A & Klemens, F 1999, 'CMOS compatible alignment marks for the SCALPEL proof of lithography tool', Microelectronic Engineering, vol. 46, no. 1, pp. 263-266. https://doi.org/10.1016/S0167-9317(99)00077-5

TY - JOUR

T1 - CMOS compatible alignment marks for the SCALPEL proof of lithography tool

AU - Farrow, R. C.

AU - Waskiewicz, W. K.

AU - Kizilyalli, I.

AU - Ocola, L.

AU - Felker, J.

AU - Biddick, C.

AU - Gallatin, G.

AU - Mkrtchyan, M.

AU - Blakey, M.

AU - Kraus, J.

AU - Novembre, A.

AU - Orphanos, P.

AU - Peabody, M.

AU - Kasica, R.

AU - Kornblit, A.

AU - Klemens, F.

N1 - Funding Information: * This work was supported, in part, by DARPA under Contract Number MDA972-98-C-007.

PY - 1999/5

Y1 - 1999/5

N2 - SCALPEL alignment marks have been fabricated in a SiO2WSi2 structure using SCALPEL lithography and plasma processing. The positions of the marks were detected through e-beam resist in the SCALPEL proof of lithography (SPOL) tool by scanning the image of the corresponding mask mark over the wafer mark and detecting the backscattered electron signal. Single scans of line space patterns yielded mark positions that were repeatable within 30 nm 3σ with a close of 0.4 μC/cm2 and signal-to-noise of 16 dB. An analysis shows that the measured repeatability is consistent with a random noise limited response. The mark detection repeatability limit, that can be attributed to SPOL machine factors, was measured to be 20 nm 3σ. By using a digitally sequenced mark pattern, the capture range of the mark detection was increased to 13 μm while maintaining 36 nm 3σ precision. The SPOL machine mark detection results are very promising considering that they were measured under electron optical conditions that were not optimized.

AB - SCALPEL alignment marks have been fabricated in a SiO2WSi2 structure using SCALPEL lithography and plasma processing. The positions of the marks were detected through e-beam resist in the SCALPEL proof of lithography (SPOL) tool by scanning the image of the corresponding mask mark over the wafer mark and detecting the backscattered electron signal. Single scans of line space patterns yielded mark positions that were repeatable within 30 nm 3σ with a close of 0.4 μC/cm2 and signal-to-noise of 16 dB. An analysis shows that the measured repeatability is consistent with a random noise limited response. The mark detection repeatability limit, that can be attributed to SPOL machine factors, was measured to be 20 nm 3σ. By using a digitally sequenced mark pattern, the capture range of the mark detection was increased to 13 μm while maintaining 36 nm 3σ precision. The SPOL machine mark detection results are very promising considering that they were measured under electron optical conditions that were not optimized.

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U2 - 10.1016/S0167-9317(99)00077-5

DO - 10.1016/S0167-9317(99)00077-5

M3 - Conference article

AN - SCOPUS:0033133115

SN - 0167-9317

VL - 46

SP - 263

EP - 266

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

T2 - Proceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98)

Y2 - 22 September 1998 through 24 September 1998

ER -

CMOS compatible alignment marks for the SCALPEL proof of lithography tool

Abstract

All Science Journal Classification (ASJC) codes

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