Coexistence of fast and slow luminescence in three-dimensional Si/Si1-xGex nanostructures

B. V. Kamenev; L. Tsybeskov; J. M. Baribeau; D. J. Lockwood

doi:10.1103/PhysRevB.72.193306

Coexistence of fast and slow luminescence in three-dimensional Si/Si1-xGex nanostructures

B. V. Kamenev, L. Tsybeskov, J. M. Baribeau, D. J. Lockwood

Electrical and Computer Engineering

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58 Scopus citations

Abstract

We report an experimental observation of both a fast (∼10μs) and a slow (∼10ms) photoluminescence (PL) that coexist in Ge-rich (x>0.5) islandlike, three-dimensional Si/Si1-xGex nanostructures. We present a quantitative model that explains the observed PL lifetime dependence on carrier concentration, temperature, and detection wavelength. The PL dynamics are found to be determined by the excess carrier concentration: the fast PL is associated with a dynamic type I and the slow PL with a type II energy band alignment in Ge-rich Si/SiGe nanostructures.

Original language	English (US)
Article number	193306
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.72.193306
State	Published - Nov 15 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.72.193306

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abstract = "We report an experimental observation of both a fast (∼10μs) and a slow (∼10ms) photoluminescence (PL) that coexist in Ge-rich (x>0.5) islandlike, three-dimensional Si/Si1-xGex nanostructures. We present a quantitative model that explains the observed PL lifetime dependence on carrier concentration, temperature, and detection wavelength. The PL dynamics are found to be determined by the excess carrier concentration: the fast PL is associated with a dynamic type I and the slow PL with a type II energy band alignment in Ge-rich Si/SiGe nanostructures.",

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AU - Kamenev, B. V.

AU - Tsybeskov, L.

AU - Baribeau, J. M.

AU - Lockwood, D. J.

PY - 2005/11/15

Y1 - 2005/11/15

N2 - We report an experimental observation of both a fast (∼10μs) and a slow (∼10ms) photoluminescence (PL) that coexist in Ge-rich (x>0.5) islandlike, three-dimensional Si/Si1-xGex nanostructures. We present a quantitative model that explains the observed PL lifetime dependence on carrier concentration, temperature, and detection wavelength. The PL dynamics are found to be determined by the excess carrier concentration: the fast PL is associated with a dynamic type I and the slow PL with a type II energy band alignment in Ge-rich Si/SiGe nanostructures.

AB - We report an experimental observation of both a fast (∼10μs) and a slow (∼10ms) photoluminescence (PL) that coexist in Ge-rich (x>0.5) islandlike, three-dimensional Si/Si1-xGex nanostructures. We present a quantitative model that explains the observed PL lifetime dependence on carrier concentration, temperature, and detection wavelength. The PL dynamics are found to be determined by the excess carrier concentration: the fast PL is associated with a dynamic type I and the slow PL with a type II energy band alignment in Ge-rich Si/SiGe nanostructures.

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Coexistence of fast and slow luminescence in three-dimensional Si/Si1-xGex nanostructures

Abstract

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