Coexistence of fast and slow luminescence in three-dimensional Si/Si1-xGex nanostructures

B. V. Kamenev, L. Tsybeskov, J. M. Baribeau, D. J. Lockwood

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Abstract

We report an experimental observation of both a fast (∼10μs) and a slow (∼10ms) photoluminescence (PL) that coexist in Ge-rich (x>0.5) islandlike, three-dimensional Si/Si1-xGex nanostructures. We present a quantitative model that explains the observed PL lifetime dependence on carrier concentration, temperature, and detection wavelength. The PL dynamics are found to be determined by the excess carrier concentration: the fast PL is associated with a dynamic type I and the slow PL with a type II energy band alignment in Ge-rich Si/SiGe nanostructures.

Original languageEnglish (US)
Article number193306
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number19
DOIs
StatePublished - Nov 15 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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