Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon

Renjie Wang, Hieu P.T. Nguyen, Ashfiqua T. Connie, J. Lee, Ishiang Shih, Zetian Mi

Research output: Contribution to journalArticlepeer-review

63 Scopus citations

Abstract

We demonstrate controllable and tunable full color light generation through the monolithic integration of blue, green/yellow, and orange/red InGaN nanowire light-emitting diodes (LEDs). Such multi-color nanowire LED arrays are fabricated directly on Si substrate using a three-step selective area molecular beam epitaxy growth process. The lateral-arranged multi-color subpixels enable controlled light mixing at the chip-level and yield color-tunable light emission with CCT values in the range from 1900 K to 6800 K, while maintaining excellent color rendering capability. This work provides a viable approach for achieving micron and nanoscale tunable full-color LED arrays without the compromise between the device efficiency and light quality associated with conventional phosphor-based LEDs.

Original languageEnglish (US)
Pages (from-to)A1768-A1775
JournalOptics Express
Volume22
Issue number25
DOIs
StatePublished - Dec 15 2014

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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