Comment on "Transient nucleation in solid-state crystallization of a-Si films" [J. Appl. Phys. 75, 2884 (1994)]

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Abstract

In the experimental study of amorphous silicon films by H. Kumomi and T. Yonehara [J. Appl. Phys. 75, 2884 (1994)] the role of transient nucleation in formation of distribution of overcritical grains was emphasized. The corresponding analytical expression was previously obtained by V. Shneidman [Sov. Phys. Technol. Phys. 32, 76 (1987); 33, 1338 (1988)]. This solution is presented and its relation to the work of Kumomi and Yonehara is discussed.

Original languageEnglish (US)
Pages (from-to)4811-4812
Number of pages2
JournalJournal of Applied Physics
Volume78
Issue number7
DOIs
StatePublished - Dec 1 1995
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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