Abstract
An analysis is given of the well‐known Moss formula connecting the energy gap to the refractive index of semiconductors. Based on Penn's model for the dielectric function of semiconductors and the treatment of Wemple, the refractive index is related to the energy gap. For small gaps, the relation is shown to reduce to the earlier predicted linear form.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 715-719 |
| Number of pages | 5 |
| Journal | physica status solidi (b) |
| Volume | 100 |
| Issue number | 2 |
| DOIs | |
| State | Published - Aug 1 1980 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics