Compact inp-based hbt vcos with a wide tuning range at w- and .d-band

Yves Baeyens, Claus Dorschky, Member Nils Weimann, Qinghung Lee, Rose Kopf, George Georgiou, John Paul Mattia, Robert Hamm, Young Kai Chen

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

Compact monolithic integrated differential voltagecontrolled oscillators (VCOs) operating in W-band were realized using InP-based heterojunction bipolar transistors (HBTs). The oscillators, with a total chip size of 0.6 by 0.35 mm2, are based on a balanced Colpitts-type topology with a coplanar transmission-line resonator. By varying the voltage across the base-collector junction of the HBT in the current mirror and by changing the current in the VCO, the oscillation frequency can be tuned between 84 and 106 GHz. At 100 GHz, a differential voltage swing of 400 mV is obtained, which should be sufficient to drive 100-Gb/s digital logic. By combining the balanced outputs of a similar differential VCO in a push-push configuration, a compact source with close to -10 dBm output power and a tuning range between 138 and 150 GHz is obtained.

Original languageEnglish (US)
Pages (from-to)2403-2408
Number of pages6
JournalIEEE Transactions on Microwave Theory and Techniques
Volume48
Issue number12
DOIs
StatePublished - Dec 1 2000
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • Heterojunction bipolar transistors
  • Indium compounds
  • Millimeter-wave bipolar transistor oscillators
  • Monolithic microwave integrated circuits (MMICs)
  • Voltage-controlled oscillators (VCOs)

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