Compact inp-based hbt vcos with a wide tuning range at w- and .d-band

Yves Baeyens; Claus Dorschky; Member Nils Weimann; Qinghung Lee; Rose Kopf; George Georgiou; John Paul Mattia; Robert Hamm; Young Kai Chen

doi:10.1109/22.898990

Compact inp-based hbt vcos with a wide tuning range at w- and .d-band

Yves Baeyens, Claus Dorschky, Member Nils Weimann, Qinghung Lee, Rose Kopf, George Georgiou, John Paul Mattia, Robert Hamm, Young Kai Chen

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Compact monolithic integrated differential voltagecontrolled oscillators (VCOs) operating in W-band were realized using InP-based heterojunction bipolar transistors (HBTs). The oscillators, with a total chip size of 0.6 by 0.35 mm2, are based on a balanced Colpitts-type topology with a coplanar transmission-line resonator. By varying the voltage across the base-collector junction of the HBT in the current mirror and by changing the current in the VCO, the oscillation frequency can be tuned between 84 and 106 GHz. At 100 GHz, a differential voltage swing of 400 mV is obtained, which should be sufficient to drive 100-Gb/s digital logic. By combining the balanced outputs of a similar differential VCO in a push-push configuration, a compact source with close to -10 dBm output power and a tuning range between 138 and 150 GHz is obtained.

Original language	English (US)
Pages (from-to)	2403-2408
Number of pages	6
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	48
Issue number	12
DOIs	https://doi.org/10.1109/22.898990
State	Published - 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

Heterojunction bipolar transistors
Indium compounds
Millimeter-wave bipolar transistor oscillators
Monolithic microwave integrated circuits (MMICs)
Voltage-controlled oscillators (VCOs)

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10.1109/22.898990

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title = "Compact inp-based hbt vcos with a wide tuning range at w- and .d-band",

abstract = "Compact monolithic integrated differential voltagecontrolled oscillators (VCOs) operating in W-band were realized using InP-based heterojunction bipolar transistors (HBTs). The oscillators, with a total chip size of 0.6 by 0.35 mm2, are based on a balanced Colpitts-type topology with a coplanar transmission-line resonator. By varying the voltage across the base-collector junction of the HBT in the current mirror and by changing the current in the VCO, the oscillation frequency can be tuned between 84 and 106 GHz. At 100 GHz, a differential voltage swing of 400 mV is obtained, which should be sufficient to drive 100-Gb/s digital logic. By combining the balanced outputs of a similar differential VCO in a push-push configuration, a compact source with close to -10 dBm output power and a tuning range between 138 and 150 GHz is obtained.",

keywords = "Heterojunction bipolar transistors, Indium compounds, Millimeter-wave bipolar transistor oscillators, Monolithic microwave integrated circuits (MMICs), Voltage-controlled oscillators (VCOs)",

author = "Yves Baeyens and Claus Dorschky and {Nils Weimann}, Member and Qinghung Lee and Rose Kopf and George Georgiou and Mattia, {John Paul} and Robert Hamm and Chen, {Young Kai}",

year = "2000",

doi = "10.1109/22.898990",

language = "English (US)",

volume = "48",

pages = "2403--2408",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Compact inp-based hbt vcos with a wide tuning range at w- and .d-band

AU - Baeyens, Yves

AU - Dorschky, Claus

AU - Nils Weimann, Member

AU - Lee, Qinghung

AU - Kopf, Rose

AU - Georgiou, George

AU - Mattia, John Paul

AU - Hamm, Robert

AU - Chen, Young Kai

PY - 2000

Y1 - 2000

N2 - Compact monolithic integrated differential voltagecontrolled oscillators (VCOs) operating in W-band were realized using InP-based heterojunction bipolar transistors (HBTs). The oscillators, with a total chip size of 0.6 by 0.35 mm2, are based on a balanced Colpitts-type topology with a coplanar transmission-line resonator. By varying the voltage across the base-collector junction of the HBT in the current mirror and by changing the current in the VCO, the oscillation frequency can be tuned between 84 and 106 GHz. At 100 GHz, a differential voltage swing of 400 mV is obtained, which should be sufficient to drive 100-Gb/s digital logic. By combining the balanced outputs of a similar differential VCO in a push-push configuration, a compact source with close to -10 dBm output power and a tuning range between 138 and 150 GHz is obtained.

AB - Compact monolithic integrated differential voltagecontrolled oscillators (VCOs) operating in W-band were realized using InP-based heterojunction bipolar transistors (HBTs). The oscillators, with a total chip size of 0.6 by 0.35 mm2, are based on a balanced Colpitts-type topology with a coplanar transmission-line resonator. By varying the voltage across the base-collector junction of the HBT in the current mirror and by changing the current in the VCO, the oscillation frequency can be tuned between 84 and 106 GHz. At 100 GHz, a differential voltage swing of 400 mV is obtained, which should be sufficient to drive 100-Gb/s digital logic. By combining the balanced outputs of a similar differential VCO in a push-push configuration, a compact source with close to -10 dBm output power and a tuning range between 138 and 150 GHz is obtained.

KW - Heterojunction bipolar transistors

KW - Indium compounds

KW - Millimeter-wave bipolar transistor oscillators

KW - Monolithic microwave integrated circuits (MMICs)

KW - Voltage-controlled oscillators (VCOs)

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JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

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Compact inp-based hbt vcos with a wide tuning range at w- and .d-band

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All Science Journal Classification (ASJC) codes

Keywords

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