Keyphrases
Nanoelectronics
100%
High Power
100%
III-nitrides
100%
Millimeter-wave Applications
100%
Ga2O3
100%
High Electron Mobility Transistor
100%
Breakdown Voltage
66%
Silicon Carbide
50%
Sapphire
50%
Threshold Voltage
33%
Voltage Characteristics
33%
Performance Characteristics
16%
Sub-threshold Voltage
16%
Frequency Characteristics
16%
Cut-off Frequency
16%
High-frequency Characteristics
16%
Buffer Material
16%
Lattice Matching
16%
Sapphire Substrate
16%
Silicon Carbide Substrate
16%
Cutting-edge Technology
16%
Gallium Oxide
16%
Enhancement-mode (E-mode)
16%
Radio Frequency Performance
16%
Depletion Mode
16%
Voltage Fault
16%
Voltage Frequency
16%
Voltage Improvement
16%
Off-state Leakage Current
16%
Engineering
Nanoelectronics
100%
Nitride
100%
Millimeter Wave
100%
Breakdown Voltage
100%
Frequency Characteristic
50%
Radio Frequency
25%
Cutting Edge
25%
Performance Characteristic
25%
Sapphire Substrate
25%
Cutoff Frequency
25%
Silicon on Sapphire
25%
Material Science
Nitride Compound
100%
Transistor
100%
Electron Mobility
100%
Silicon
66%
Silicon Carbide
66%
Sapphire
66%
Oxide Compound
16%
Gallium
16%