@inproceedings{9bc6e06b15774a51a7baf76a2373521f,
title = "Comparative study of light-emitting porous silicon anodized with light assistance and in the dark",
abstract = "In this study, we compare two different types of light emitting porous silicon (LEpSi) samples: LEpSi anodized in the dark (DA) and LEpSi anodized with light assistance (LA). On the basis of photoluminescence (PL), Raman, FTIR, SEM, spatially resolved reflectance (SRR) and spatially resolved photoluminescence (SRPL) studies, we demonstrate that the luminescence in LA porous silicon is strong, easily tunable, very stable and originates from macropore areas. These attractive properties result from passivation by oxygen in the Si-O-Si bridging configuration that takes place during electrochemical anodization. In addition, we have been able to correlate light emission with the presence of crystalline silicon nanograins.",
author = "Leonid Tsybeskov and C. Peng and Duttagupta, {S. P.} and E. Ettedgui and Y. Gao and Fauchet, {P. M.} and Carver, {G. E.}",
year = "1993",
month = dec,
day = "1",
language = "English (US)",
isbn = "1558991948",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "307--311",
editor = "M.A. Tischler and R.T. Collins and M.L.W. Thewalt and G. Abstreiter",
booktitle = "Materials Research Society Symposium Proceedings",
note = "Proceedings of the Symposium on Silicon-Based Optoelectronic Materials ; Conference date: 12-04-1993 Through 14-04-1993",
}