Comparative study of light-emitting porous silicon anodized with light assistance and in the dark

L. Tsybeskov; C. Peng; S. P. Duttagupta; E. Ettedgui; Y. Gao; P. M. Fauchet; G. E. Carver

doi:10.1557/proc-298-307

Comparative study of light-emitting porous silicon anodized with light assistance and in the dark

L. Tsybeskov, C. Peng, S. P. Duttagupta, E. Ettedgui, Y. Gao, P. M. Fauchet, G. E. Carver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Scopus citations

Abstract

In this study, we compare two different types of light emitting porous silicon (LEpSi) samples: LEpSi anodized in the dark (DA) and LEpSi anodized with light assistance (LA). On the basis of photoluminescence (PL), Raman, FTIR, SEM, spatially resolved reflectance (SRR) and spatially resolved photoluminescence (SRPL) studies, we demonstrate that the luminescence in LA porous silicon is strong, easily tunable, very stable and originates from macropore areas. These attractive properties result from passivation by oxygen in the Si-O-Si bridging configuration that takes place during electrochemical anodization. In addition, we have been able to correlate light emission with the presence of crystalline silicon nanograins.

Original language	English (US)
Title of host publication	Materials Research Society Symposium Proceedings
Publisher	Publ by Materials Research Society
Pages	307-311
Number of pages	5
ISBN (Print)	1558991948, 9781558991941
DOIs	https://doi.org/10.1557/proc-298-307
State	Published - 1993
Externally published	Yes
Event	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA Duration: Apr 12 1993 → Apr 14 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	298
ISSN (Print)	0272-9172

Other

Other	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials
City	San Francisco, CA, USA
Period	4/12/93 → 4/14/93

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-298-307

Cite this

Tsybeskov, L., Peng, C., Duttagupta, S. P., Ettedgui, E., Gao, Y., Fauchet, P. M., & Carver, G. E. (1993). Comparative study of light-emitting porous silicon anodized with light assistance and in the dark. In Materials Research Society Symposium Proceedings (pp. 307-311). (Materials Research Society Symposium Proceedings; Vol. 298). Publ by Materials Research Society. https://doi.org/10.1557/proc-298-307

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title = "Comparative study of light-emitting porous silicon anodized with light assistance and in the dark",

abstract = "In this study, we compare two different types of light emitting porous silicon (LEpSi) samples: LEpSi anodized in the dark (DA) and LEpSi anodized with light assistance (LA). On the basis of photoluminescence (PL), Raman, FTIR, SEM, spatially resolved reflectance (SRR) and spatially resolved photoluminescence (SRPL) studies, we demonstrate that the luminescence in LA porous silicon is strong, easily tunable, very stable and originates from macropore areas. These attractive properties result from passivation by oxygen in the Si-O-Si bridging configuration that takes place during electrochemical anodization. In addition, we have been able to correlate light emission with the presence of crystalline silicon nanograins.",

author = "L. Tsybeskov and C. Peng and Duttagupta, {S. P.} and E. Ettedgui and Y. Gao and Fauchet, {P. M.} and Carver, {G. E.}",

year = "1993",

doi = "10.1557/proc-298-307",

language = "English (US)",

isbn = "1558991948",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

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booktitle = "Materials Research Society Symposium Proceedings",

note = "Proceedings of the Symposium on Silicon-Based Optoelectronic Materials ; Conference date: 12-04-1993 Through 14-04-1993",

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Tsybeskov, L, Peng, C, Duttagupta, SP, Ettedgui, E, Gao, Y, Fauchet, PM & Carver, GE 1993, Comparative study of light-emitting porous silicon anodized with light assistance and in the dark. in Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 298, Publ by Materials Research Society, pp. 307-311, Proceedings of the Symposium on Silicon-Based Optoelectronic Materials, San Francisco, CA, USA, 4/12/93. https://doi.org/10.1557/proc-298-307

Comparative study of light-emitting porous silicon anodized with light assistance and in the dark. / Tsybeskov, L.; Peng, C.; Duttagupta, S. P. et al.
Materials Research Society Symposium Proceedings. Publ by Materials Research Society, 1993. p. 307-311 (Materials Research Society Symposium Proceedings; Vol. 298).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Tsybeskov, L.

AU - Peng, C.

AU - Duttagupta, S. P.

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AU - Gao, Y.

AU - Fauchet, P. M.

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N2 - In this study, we compare two different types of light emitting porous silicon (LEpSi) samples: LEpSi anodized in the dark (DA) and LEpSi anodized with light assistance (LA). On the basis of photoluminescence (PL), Raman, FTIR, SEM, spatially resolved reflectance (SRR) and spatially resolved photoluminescence (SRPL) studies, we demonstrate that the luminescence in LA porous silicon is strong, easily tunable, very stable and originates from macropore areas. These attractive properties result from passivation by oxygen in the Si-O-Si bridging configuration that takes place during electrochemical anodization. In addition, we have been able to correlate light emission with the presence of crystalline silicon nanograins.

AB - In this study, we compare two different types of light emitting porous silicon (LEpSi) samples: LEpSi anodized in the dark (DA) and LEpSi anodized with light assistance (LA). On the basis of photoluminescence (PL), Raman, FTIR, SEM, spatially resolved reflectance (SRR) and spatially resolved photoluminescence (SRPL) studies, we demonstrate that the luminescence in LA porous silicon is strong, easily tunable, very stable and originates from macropore areas. These attractive properties result from passivation by oxygen in the Si-O-Si bridging configuration that takes place during electrochemical anodization. In addition, we have been able to correlate light emission with the presence of crystalline silicon nanograins.

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Comparative study of light-emitting porous silicon anodized with light assistance and in the dark

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