Complex dielectric function of thiazolothiazole thin films determined by spectroscopic ellipsometry

In this paper, the complex dielectric function of 2,5-bis(N,N-dibutyl-4-aminophenyl) thiazolo[5,4-d]thiazole is reported. Thin films of this material were obtained by spin coating on a silicon substrate. The samples were investigated using spectroscopic ellipsometry in the spectral range from 354 nm to 1907 nm at multiple angles of incidence. The ellipsometric data were analyzed using a stratified-layer model composed of a thiazolothiazole thin film, a native SiO₂ oxide, and a Si substrate. The model dielectric function of the thiazolothiazole thin film was modeled using a series of Tauc-Lorentz and Gaussian oscillators. The best-model calculated data reproduces the experimental data very well. The bandgap of TTz is reported and found to be in good agreement with density functional theory calculations reported earlier.