Computer simulation of edge effects in a small-area mesa N-P junction diode

Jesse Appel; Bhushan Sopori; N. M. Ravindra

Computer simulation of edge effects in a small-area mesa N-P junction diode

Jesse Appel, Bhushan Sopori, N. M. Ravindra

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The influence of edges on the performance of small-area solar cells is determined using a modified commercial, finite-element software package. The n⁺/p mesa device is modeled as having a sub-oxide layer on the edges, which acquires positive charges that result in development of an electric field within the device. Our computer simulations include generation/recombination at the diode edges as well as the influence of light on the recombination characteristics of the edges. We present a description of our model, dark and illuminated characteristics of devices with various surface charge concentrations, and the dynamics of carrier generation/recombination. The influence of edge geometry on diode performance is determined.

Original language	English (US)
Title of host publication	Materials Research Society Symposium Proceedings - Photovoltaic Materials and Manufacturing Issues
Pages	125-130
Number of pages	6
State	Published - 2009
Event	2008 MRS Fall Meeting - Boston, MA, United States Duration: Dec 2 2008 → Dec 4 2008

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1123
ISSN (Print)	0272-9172

Other

Other	2008 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	12/2/08 → 12/4/08

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{a890fcfefa324131a6f039a2adea3499,

title = "Computer simulation of edge effects in a small-area mesa N-P junction diode",

abstract = "The influence of edges on the performance of small-area solar cells is determined using a modified commercial, finite-element software package. The n+/p mesa device is modeled as having a sub-oxide layer on the edges, which acquires positive charges that result in development of an electric field within the device. Our computer simulations include generation/recombination at the diode edges as well as the influence of light on the recombination characteristics of the edges. We present a description of our model, dark and illuminated characteristics of devices with various surface charge concentrations, and the dynamics of carrier generation/recombination. The influence of edge geometry on diode performance is determined.",

author = "Jesse Appel and Bhushan Sopori and Ravindra, {N. M.}",

year = "2009",

language = "English (US)",

isbn = "9781605110950",

series = "Materials Research Society Symposium Proceedings",

pages = "125--130",

booktitle = "Materials Research Society Symposium Proceedings - Photovoltaic Materials and Manufacturing Issues",

note = "2008 MRS Fall Meeting ; Conference date: 02-12-2008 Through 04-12-2008",

}

Computer simulation of edge effects in a small-area mesa N-P junction diode. / Appel, Jesse; Sopori, Bhushan; Ravindra, N. M.
Materials Research Society Symposium Proceedings - Photovoltaic Materials and Manufacturing Issues. 2009. p. 125-130 (Materials Research Society Symposium Proceedings; Vol. 1123).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Computer simulation of edge effects in a small-area mesa N-P junction diode

AU - Appel, Jesse

AU - Sopori, Bhushan

AU - Ravindra, N. M.

PY - 2009

Y1 - 2009

N2 - The influence of edges on the performance of small-area solar cells is determined using a modified commercial, finite-element software package. The n+/p mesa device is modeled as having a sub-oxide layer on the edges, which acquires positive charges that result in development of an electric field within the device. Our computer simulations include generation/recombination at the diode edges as well as the influence of light on the recombination characteristics of the edges. We present a description of our model, dark and illuminated characteristics of devices with various surface charge concentrations, and the dynamics of carrier generation/recombination. The influence of edge geometry on diode performance is determined.

AB - The influence of edges on the performance of small-area solar cells is determined using a modified commercial, finite-element software package. The n+/p mesa device is modeled as having a sub-oxide layer on the edges, which acquires positive charges that result in development of an electric field within the device. Our computer simulations include generation/recombination at the diode edges as well as the influence of light on the recombination characteristics of the edges. We present a description of our model, dark and illuminated characteristics of devices with various surface charge concentrations, and the dynamics of carrier generation/recombination. The influence of edge geometry on diode performance is determined.

UR - http://www.scopus.com/inward/record.url?scp=74549210638&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74549210638&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:74549210638

SN - 9781605110950

T3 - Materials Research Society Symposium Proceedings

SP - 125

EP - 130

BT - Materials Research Society Symposium Proceedings - Photovoltaic Materials and Manufacturing Issues

T2 - 2008 MRS Fall Meeting

Y2 - 2 December 2008 through 4 December 2008

ER -

Computer simulation of edge effects in a small-area mesa N-P junction diode

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this