Computer simulation of edge effects in a small-area mesa N-P junction diode

Jesse Appel, Bhushan Sopori, N. Ravindra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The influence of edges on the performance of small-area solar cells is determined using a modified commercial, finite-element software package. The n+/p mesa device is modeled as having a sub-oxide layer on the edges, which acquires positive charges that result in development of an electric field within the device. Our computer simulations include generation/recombination at the diode edges as well as the influence of light on the recombination characteristics of the edges. We present a description of our model, dark and illuminated characteristics of devices with various surface charge concentrations, and the dynamics of carrier generation/recombination. The influence of edge geometry on diode performance is determined.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings - Photovoltaic Materials and Manufacturing Issues
Pages125-130
Number of pages6
StatePublished - Dec 1 2009
Event2008 MRS Fall Meeting - Boston, MA, United States
Duration: Dec 2 2008Dec 4 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1123
ISSN (Print)0272-9172

Other

Other2008 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period12/2/0812/4/08

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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