Conductivity cusp in a disordered metal

T. F. Rosenbaum, K. Andres, G. A. Thomas, P. A. Lee

Research output: Contribution to journalArticlepeer-review

132 Scopus citations

Abstract

A tendency toward a cusp at zero temperature in the electrical conductivity of Si crystals doped with P is observed. It is found that, within the metallic state, decreasing P concentration enhances the cusp and then rapidly changes its sign as a pseudogap opens. Such a cusp has been predicted for a disordered metal in which Coulomb interactions dominate the scattering.

Original languageEnglish (US)
Pages (from-to)568-571
Number of pages4
JournalPhysical Review Letters
Volume46
Issue number8
DOIs
StatePublished - 1981
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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