Abstract
A tendency toward a cusp at zero temperature in the electrical conductivity of Si crystals doped with P is observed. It is found that, within the metallic state, decreasing P concentration enhances the cusp and then rapidly changes its sign as a pseudogap opens. Such a cusp has been predicted for a disordered metal in which Coulomb interactions dominate the scattering.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 568-571 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 46 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1981 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy