A tendency toward a cusp at zero temperature in the electrical conductivity of Si crystals doped with P is observed. It is found that, within the metallic state, decreasing P concentration enhances the cusp and then rapidly changes its sign as a pseudogap opens. Such a cusp has been predicted for a disordered metal in which Coulomb interactions dominate the scattering.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Review Letters|
|State||Published - 1981|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)