Controllable growth of γ-GeSe microflakes by vapor phase deposition via rapid cooling strategy

Kaiyi Wang, Ye Chai, Hui Gao, Guohua Zhu, Shijie Hao, Hongyi Zhou, Yulong Hao, Weiqi Gao, Zhongkun Zhao, Hongtao Sun, Guolin Hao

Research output: Contribution to journalArticlepeer-review

Abstract

γ-GeSe has recently emerged as a promising material for electronics and optoelectronics due to its unique band structure and excellent electrical properties. However, controllable growth of γ-GeSe remains a significant challenge. In this work, the controllable growth of γ-GeSe microflakes (MFs) on a mica substrate was reported by vapor phase deposition via a rapid cooling strategy. The screw dislocation-driven growth behavior is confirmed based on systematic characterizations. Our experimental results demonstrate that the stress induced during the rapid cooling process is critical for the controllable synthesis of γ-GeSe MFs and corresponding growth mechanism was proposed. Our work provides a new experimental strategy for the controlled growth of γ-GeSe MFs, which is beneficial for constructing GeSe-based nanoelectronic and optoelectronic devices.

Original languageEnglish (US)
Article number124301
JournalJournal of Applied Physics
Volume134
Issue number12
DOIs
StatePublished - Sep 28 2023
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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