Controlled doping of graphene by impurity charge compensation via a polarized ferroelectric polymer

Kelotchi S. Figueroa, Nicholas J. Pinto, Srinivas V. Mandyam, Meng Qiang Zhao, Chengyu Wen, Paul Masih Das, Zhaoli Gao, Marija Drndić, A. T. Charlie Johnson

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A simple technique of doping graphene by manipulating adsorbed impurity charges is presented. Using a field effect transistor configuration, controlled polarization of a ferroelectric polymer gate is used to compensate and neutralize charges of one type. The uncompensated charges of the opposite type then dope graphene. Both n- and p-type doping are possible by this method, which is non-destructive and reversible. We observe a change in n-type dopant concentration of 8 × 1012 cm-2 and a change in electron mobility of 650%. The electron and hole mobilities are inversely proportional to the impurity concentration, as predicted by theory. Selective doping of graphene can be achieved using this method by patterning gate electrodes at strategic locations and programming them independently. Such charge control without introducing hard junctions, therefore, permits seamless integration of multiple devices on a continuous graphene film.

Original languageEnglish (US)
Article number125503
JournalJournal of Applied Physics
Volume127
Issue number12
DOIs
StatePublished - Mar 31 2020
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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