TY - JOUR
T1 - Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P-N Junctions
AU - Mandyam, Srinivas V.
AU - Zhao, Meng Qiang
AU - Masih Das, Paul
AU - Zhang, Qicheng
AU - Price, Christopher C.
AU - Gao, Zhaoli
AU - Shenoy, Vivek B.
AU - Drndić, Marija
AU - Johnson, Alan T.Charlie
N1 - Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/9/24
Y1 - 2019/9/24
N2 - Bilayer two-dimensional (2D) van der Waals (vdW) materials are attracting increasing attention due to their predicted high quality electronic and optical properties. Here, we demonstrate dense, selective growth of WSe2 bilayer flakes by chemical vapor deposition with the use of a 1:10 molar mixture of sodium cholate and sodium chloride as the growth promoter to control the local diffusion of W-containing species. A large fraction of the bilayer WSe2 flakes showed a 0 (AB) and 60° (AA′) twist between the two layers, whereas Moiré 15 and 30° twist angles were also observed. Well-defined monolayer-bilayer junctions were formed in the as-grown bilayer WSe2 flakes, and these interfaces exhibited p-n diode rectification and an ambipolar transport characteristic. This work provides an efficient method for the layer-controlled growth of 2D materials, in particular, 2D transition metal dichalcogenides, and promotes their applications in next-generation electronic and optoelectronic devices.
AB - Bilayer two-dimensional (2D) van der Waals (vdW) materials are attracting increasing attention due to their predicted high quality electronic and optical properties. Here, we demonstrate dense, selective growth of WSe2 bilayer flakes by chemical vapor deposition with the use of a 1:10 molar mixture of sodium cholate and sodium chloride as the growth promoter to control the local diffusion of W-containing species. A large fraction of the bilayer WSe2 flakes showed a 0 (AB) and 60° (AA′) twist between the two layers, whereas Moiré 15 and 30° twist angles were also observed. Well-defined monolayer-bilayer junctions were formed in the as-grown bilayer WSe2 flakes, and these interfaces exhibited p-n diode rectification and an ambipolar transport characteristic. This work provides an efficient method for the layer-controlled growth of 2D materials, in particular, 2D transition metal dichalcogenides, and promotes their applications in next-generation electronic and optoelectronic devices.
KW - bilayer WSe
KW - controlled growth
KW - growth promoter
KW - monolayer-bilayer junction
KW - two-dimensional materials
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U2 - 10.1021/acsnano.9b04453
DO - 10.1021/acsnano.9b04453
M3 - Article
C2 - 31424199
AN - SCOPUS:85072332796
SN - 1936-0851
VL - 13
SP - 10490
EP - 10498
JO - ACS Nano
JF - ACS Nano
IS - 9
ER -