Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P-N Junctions

Keyphrases

• P-n Junction 100%
• Flakes 100%
• Controlled Growth 100%
• Tungsten Diselenide 100%
• Bilayer WSe2 100%
• Well-defined 50%
• Optical Properties 50%
• Electronic Devices 50%
• As-grown 50%
• Electronic Properties 50%
• Transport Characteristics 50%
• Chemical Vapor Deposition 50%
• Layer Control 50%
• Sodium Chloride 50%
• Two-layer 50%
• Selective Growth 50%
• Two Dimensional Materials 50%
• WSe2 50%
• Growth Promoter 50%
• Two-dimensional Van Der Waals Materials 50%
• Diode Rectification 50%
• Sodium Cholate 50%
• Local Diffusion 50%
• Bilayer Flake 50%
• Ambipolar Transport 50%
• Optoelectronic Devices 50%
• Angle of Twist 50%
• Two-dimensional Transition Metal Dichalcogenides 50%
• Next-generation Electronics 50%

Material Science

• Sodium 100%
• Tungsten 100%
• Optical Property 50%
• Monolayers 50%
• Electronic Property 50%
• Chemical Vapor Deposition 50%
• Two-Dimensional Material 50%
• Transition Metal Dichalcogenide 50%
• Chloride 50%